Ablation of silicon suboxide thin layers

Jahn, Mike; Richter, Jan; Weichenhain-Schriever, R.; Meinertz, J.; Ihlemann, J.

doi:10.1007/s00339-010-5892-9

Cited by 8 publications

(4 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In contrast to SiO 2 , they absorb strongly in the ultraviolet spectral range. The absorption coefficient of SiO x at 193 nm is about 4.6 × 10 5 cm −1 for x ≈ 1; the refractive index is about n = 1.9 [11].…”

Section: Methodsmentioning

confidence: 97%

Patterned laser annealing of silicon oxide films

2011

Self Cite

View full text Add to dashboard Cite

UV-absorbing silicon monoxide (SiO x , x ≈ 1) thin films on fused silica substrates are irradiated by an ArF excimer laser (wavelength 193 nm) in the sub-ablation threshold regime. Multi-pulse irradiation of films with ∼200-nm thickness at a fluence of about 100 mJ/cm 2 leads to a significant increase of the UV transmission, indicating the oxidation of SiO x to SiO 2 . The quality of the obtained films after this laser annealing process depends on the oxygen content of the environment. Irradiation in air at atmospheric pressure leads to the formation of sub-micron-sized oxide particles on top of the film. Structured illumination is applied either to form areas of the film with changed transmission and refractive index, or for the formation of regular particle patterns with sub-micron periods. These processes can be utilized for the fabrication of phase masks or for various types of surface functionalization.

show abstract

Section: Methodsmentioning

confidence: 97%

Patterned laser annealing of silicon oxide films

2011

Self Cite

View full text Add to dashboard Cite

show abstract

“…In contrast to SiO 2 , they absorb strongly in the ultraviolet spectral range. The absorption coefficient of SiO x at 248 nm is about 2.7 × 10 5 cm −1 for x ≈ 1, and the refractive index is about n = 1.9 [ 9 ]. A 2-mm-thick film of PDMS (Sylgard 184, Dow Corning, Midland, MI, USA) was casted over the SiO x coating and dried in air at room temperature.…”

Section: Methodsmentioning

confidence: 99%

Pulsed laser-induced formation of silica nanogrids

Ihlemann

Weichenhain-Schriever

2014

Nanoscale Res Lett

View full text Add to dashboard Cite

Silica grids with micron to sub-micron mesh sizes and wire diameters of 50 nm are fabricated on fused silica substrates. They are formed by single-pulse structured excimer laser irradiation of a UV-absorbing silicon suboxide (SiO x ) coating through the transparent substrate. A polydimethylsiloxane (PDMS) superstrate (cover layer) coated on top of the SiO x film prior to laser exposure serves as confinement for controlled laser-induced structure formation. At sufficiently high laser fluence, this process leads to grids consisting of a periodic loop network connected to the substrate at regular positions. By an additional high-temperature annealing, the residual SiO x is oxidized, and a pure SiO 2 grid is obtained.

show abstract

“…These coatings are characterized by their hardness and strong adhesion. They also exhibit significant absorption in the ultraviolet spectral range, with high absorption coefficient of around 2.7 × 10 5 cm −1 at a wavelength of 248 nm [33].…”

Section: Sample Preparationmentioning

confidence: 99%

Fabrication of fluidic submicron-channels by pulsed laser-induced buckling of SiOx films on fused silica

Bakhtiari,

Ihlemann

2024

Discover Nano

View full text Add to dashboard Cite

Recently, considerable attention has been drawn to the field of micro/nanofluidic channels. However, current methods for fabricating micro/nanochannels are complex, costly, and time-intensive. In the present work, we successfully fabricated transparent submicron-channels on fused silica substrates (SiO2) using a straightforward laser process. To achieve this, a single-pulse excimer laser irradiation in a rear side configuration was employed to treat a thin film of UV-absorbing silicon suboxide (SiOx) through the transparent SiO2 substrate. A polydimethylsiloxane (PDMS) superstrate (coating layer) was applied over the SiOx film before laser exposure, serving as a confinement for controlled structure formation induced by the laser. Under optimal laser fluence, the thin SiOx film buckled, leading to the formation of channels with a width ranging from 10 to 20 µm and a height of 800 to 1200 nm, exhibiting a bell-like cross-sections following the so-called Euler buckling mode. Wider channels displayed morphologies resembling varicose or telephone cord modes. Subsequent high-temperature annealing led to the oxidation of SiOx, resulting transparent SiO2 channels on the fused silica substrate. The manufactured nanochannels exhibited promising potential for effectively transporting fluids of diverse viscosities. Various fluids were conveyed through these nanochannels via capillary action and in accordance with the Lucas-Washburn equation.

show abstract

Ablation of silicon suboxide thin layers

Cited by 8 publications

References 22 publications

Patterned laser annealing of silicon oxide films

Patterned laser annealing of silicon oxide films

Pulsed laser-induced formation of silica nanogrids

Fabrication of fluidic submicron-channels by pulsed laser-induced buckling of SiOx films on fused silica

Contact Info

Product

Resources

About