Abnormal low-field M-type magnetoresistance in hexagonal noncollinear ferromagnetic MnFeGe alloy

Tang, Jingling; Wang, Pei-Hao; You, Yurong; Wang, Yadong; Xu, Zhixin; Hou, Zhipeng; Zhang, Hongguo; Xu, Guizhou; Xu, Feng

doi:10.1007/s12598-022-02008-y

Cited by 7 publications

(4 citation statements)

References 34 publications

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“…Generally, MR can be used to qualitatively analyze the magnetic domain evolution. [ 50,51 ] The MR curves exhibited a “W” shape owing to the out‐of‐plane magnetization of high‐density stripe domains below 175 K. [ 50,51 ] Moreover, a monotonic variation corresponding to the topological (anti)meron chains phase within the in‐plane domain above 175 K was also observed. Figure 5b shows the detailed MR‐µ 0 H curve at some representative temperatures surrounding the phases of stripes and topological (anti)meron chains, the critical field H C corresponds to the transition of stripes or topological (anti)meron chains to a ferromagnetic polarized state, clearly evident in the MR curves.…”

Section: Resultsmentioning

confidence: 99%

Spontaneous Topological (Anti)meron Chains in the Domain Walls of Centrosymmetric Rare‐Earth Magnet

Xu,

Wang,

et al. 2024

Adv Funct Materials

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Exploration and manipulation of topological protected magnetic swirls, such as skyrmion, antiskyrmion, meron, and vortex, holds significance for fundamental research and practical applications in high‐density magnetic information storage and spintronics because of their high storage density and low driven current. This study unveils the existence of field‐free spontaneous (anti)meron chains with a topological charge of ±1/2 in the centrosymmetric rare‐earth magnet Tb6Co2.17Si2.5 via in situ real‐space observation. The spin reorientation transition from in‐plane to uniaxial anisotropy contributes to the spontaneous transformation from straight domain walls to topological (anti)meron chains and to stripe domains along the [110] zone axis during in situ cooling. The study further confirms the critical role of the noncollinear magnetic structure of Tb atoms in the formation of topological (anti)meron chains via real‐space observations, first‐principles calculations, and micromagnetic simulations. The spontaneous topological magnetic texture is strongly correlated with the 4f electrons of rare‐earth atoms, enriching and stimulating alternative generation mechanisms of topological spin textures from emerging rare‐earth magnets, and further applications in spintronics.

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Section: Resultsmentioning

confidence: 99%

Spontaneous Topological (Anti)meron Chains in the Domain Walls of Centrosymmetric Rare‐Earth Magnet

Xu,

Wang,

et al. 2024

Adv Funct Materials

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“…[24] This has been observed in multiple intermetallic bulk and film samples. [25][26][27] The resistivity of Mn 2 CoGa sample falls within this range and much smaller than that of a classical semiconductor (typically ranging from mΩ cm to Ω cm [28] ). The ρðTÞ plot was analyzed and fitted by considering three kinds of scattering processes, described by the following equation:…”

Section: Resultsmentioning

confidence: 99%

“…[ 24 ] This has been observed in multiple intermetallic bulk and film samples. [ 25–27 ] The resistivity of Mn 2 CoGa sample falls within this range and much smaller than that of a classical semiconductor (typically ranging from mΩ cm to Ω cm [ 28 ] ). The

$\rho \left(\right.

…”

Section: Resultsmentioning

confidence: 99%

Magnetic‐ and Spin‐Gapless‐Related Transport Properties in Sputtered Mn₂CoGa Thin Films

Xu,

Tang,

Wang

et al. 2024

Physica Rapid Research Ltrs

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Spin‐gapless semiconductors (SGS) are highly attractive for spintronics applications due to their unique spin‐polarized band structure. In this study, we focus on the potential SGS candidate of Mn2CoGa alloy by growing thin films using magnetron sputtering on Si(001)/SiO2 substrates. By applying appropriate heat treatment, the Mn2CoGa thin films can crystallize into the expected Heusler structure, as confirmed by the dominant (220) peak observed in XRD. These films exhibited soft magnetized behavior, with a saturation magnetization of approximately 1.86 μ B /f.u. at 10K. This value deviated slightly from the theoretical prediction, indicating the presence of antisite disorder within the film. The resistivity curve showed a negative temperature coefficient, which was attributed to the strong electron‐electron interaction that is also connected to the disorder. Despite the presence of disorder, positive variation and sign reversal of the magnetoresistance were observed, along with a nearly vanishing anomalous Hall effect, both of which are typical characteristics of SGS. Compared to bulk Mn2CoGa, the carrier concentration was larger and the mobility was lower in the film, while similar temperature dependences were observed.This article is protected by copyright. All rights reserved.

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“…However, a neutron diffraction study on MnFeGe reveals that Mn and Fe atoms randomly occupy the 2a and 2d sites (i.e. atomic disorder), and it exhibits a canted magnetic structure at 80 K [21][22][23]. In MnFeGe, the magnetic moments are localized on Mn and Fe atoms, but it has been reported that the effective magnetic moment is greater than the low-temperature saturation moment [21]; for which no explanation has been provided.…”

Section: Introductionmentioning

confidence: 99%

Evidence of weak itinerant ferromagnetism and Griffiths like phase in MnFeGe

Dara

Patra

Moharana

et al. 2023

J. Phys.: Condens. Matter

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Realizing the itinerant type of magnetic exchange in Mn-based alloys is quite unusual because of the weak hybridization between Mn-moments and conduction electrons. However, in the current study, we found MnFeGe to exhibit weak itinerant type magnetic character possibly arising due to the hybridization between Mn, Fe atoms with Ge atoms. Here, we present a comprehensive structural and magnetic study on polycrystalline MnFeGe. Rietveld refinement of the XRD pattern confirms that Mn and Fe atoms randomly (atomic disorder) occupy the 2a and 2d sites in MnFeGe. From the magnetic measurements, Curie temperature and saturation moment values are found to be 162 K and 1.58 μ_B⁄(f.u.) at 2 K, respectively. The relative low values of Curie temperature, saturation magnetic moment, and a large value of Rhodes-Wohlfarth ratio (~ 3.4) indicate the weak itinerant ferromagnetic character of the system. The Takahashi spin fluctuation theory analysis further supports the weak itinerant ferromagnetism in MnFeGe. Besides, we also observed Griffiths phase like behavior above the Curie temperature, which is attributed to the presence of atomic disorder in the system. The presence of Griffiths phase is further confirmed by the zero spontaneous magnetization. Our findings demonstrate that MnFeGe is one of the very few Mn-based systems with weak itinerant magnetic behavior.

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Abnormal low-field M-type magnetoresistance in hexagonal noncollinear ferromagnetic MnFeGe alloy

Cited by 7 publications

References 34 publications

Spontaneous Topological (Anti)meron Chains in the Domain Walls of Centrosymmetric Rare‐Earth Magnet

Spontaneous Topological (Anti)meron Chains in the Domain Walls of Centrosymmetric Rare‐Earth Magnet

Magnetic‐ and Spin‐Gapless‐Related Transport Properties in Sputtered Mn₂CoGa Thin Films

Evidence of weak itinerant ferromagnetism and Griffiths like phase in MnFeGe

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Abnormal low-field M-type magnetoresistance in hexagonal noncollinear ferromagnetic MnFeGe alloy

Cited by 7 publications

References 34 publications

Spontaneous Topological (Anti)meron Chains in the Domain Walls of Centrosymmetric Rare‐Earth Magnet

Spontaneous Topological (Anti)meron Chains in the Domain Walls of Centrosymmetric Rare‐Earth Magnet

Magnetic‐ and Spin‐Gapless‐Related Transport Properties in Sputtered Mn2CoGa Thin Films

Evidence of weak itinerant ferromagnetism and Griffiths like phase in MnFeGe

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Magnetic‐ and Spin‐Gapless‐Related Transport Properties in Sputtered Mn₂CoGa Thin Films