About the importance of purge time in molecular layer deposition of alucone films

Jain, Hardik; Poodt, Paul

doi:10.1039/d1dt00623a

Cited by 18 publications

(24 citation statements)

References 52 publications

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“…From our previous work, we know that providing longer purge times for DMAI has no significant effect on the overall GPC. 20 In the present work, however, we found that providing longer purge times for EG led to a decrease in the GPC (Fig. 2c).…”

Section: Resultscontrasting

confidence: 58%

Spatial atmospheric pressure molecular layer deposition of alucone films using dimethylaluminum isopropoxide as the precursor

2022

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Section: Resultscontrasting

confidence: 58%

Spatial atmospheric pressure molecular layer deposition of alucone films using dimethylaluminum isopropoxide as the precursor

2022

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“…Generally, MLD processes are not fully saturated due to non-self-limiting physisorption reactions, creating a so-called "soft" saturation. 28,34,50 The PDIC/ ED and PDIC/HD processes were explored previously with ex situ ellipsometry measurements. 34 For each process the total pulse time of one precursor was maintained constant while the other was varied between 0-60 s (PDIC), 0-3 s (ED), and 0-10 s (HD) for twenty MLD cycles deposited at 60 °C on SiO 2 .…”

Section: Mld Reaction Saturationmentioning

confidence: 99%

“…soft saturation associated with reactant physisorption) consistent with other MLD reactions. 28,34,50 For the experiments below, unless otherwise…”

Section: Mld Reaction Saturationmentioning

confidence: 99%

In situ analysis of growth rate evolution during molecular layer deposition of ultra-thin polyurea films using aliphatic and aromatic precursors

et al. 2022

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“…[ 40,46,54,108,109,114,125,148,211–213,218,219,221,226,228,230,234,240,244,245,249,252,255,256,258,260,262,264,267–269,273–277,279–284,325,333–369 ] The bulkier dimethyl aluminum isopropoxide precursor has been successfully used with EG as well. [ 323 ] Different TMA + organic processes have been investigated, e.g., to elucidate the effect of the organic backbone length, i.e., long (1,10‐decanediol) or short (1,6‐hexanediol), on the mechanical properties; indeed, as expected, with the increasing chain length, the stretchability was enhanced.…”

Section: Brief Account Of Ald/mld Processes Developedmentioning

confidence: 98%

“…The prototype process is the one with TMA and EG. [ 111,231,287–332 ] However, TMA works very well with many other organics as well. [ 40,46,54,108,109,114,125,148,211–213,218,219,221,226,228,230,234,240,244,245,249,252,255,256,258,260,262,264,267–269,273–277,279–284,325,333–369 ] The bulkier dimethyl aluminum isopropoxide precursor has been successfully used with EG as well.…”

Section: Brief Account Of Ald/mld Processes Developedmentioning

confidence: 99%

Atomic/Molecular Layer Deposition for Designer's Functional Metal–Organic Materials

Multia

Karppinen

2022

Adv Materials Inter

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organic ligands act as bridges between the metal centers to form infinite 1D, 2D, or 3D structures. These materials are often referred to as coordination polymer (CP) [1] or metal-organic framework (MOF) [2] materials; the latter term is used when the metal-organic material is crystalline and highly porous. [3] The research field of CP-and MOF-type materials has grown tremendously over the last two decades. The structural and chemical diversity of these materials has served as a continuous source of scientific excitement; the same diversity has also triggered huge technological interest as these materials possess enormous potential to be tailored for a wide variety of applications ranging from gas capture, storage, and separation to sensing, catalysis, optics, electronics, and energy storage. [4][5][6][7] Most of the targeted application breakthroughs of metal-organics require that these materials can be produced as highquality thin films and coatings, which can be integrated with the other components in the actual device configuration. The possibility to deposit such thin films in an industry-feasible manner on the substrate types needed, would be a major step forward in the field. [8] Traditionally, solvent-based processes such as liquid-phase epitaxy, Langmuir-Blodgett, layer-by-layer, and electrochemical deposition techniques have been used for metal-organic thin films. [9][10][11] These are, however, incompatible with the requirements set by the possible integration of the materials in microelectronics. This is due to corrosion and contamination risks, and the problems in patterning and precise deposition on high-aspect-ratio features. Hence, it is vital to develop solventfree thin-film deposition routes for the metal-organic material family. In the optimal case, these deposition methods should allow conformal coatings on large-area and high-aspect-ratio substrates.The currently strongly emerging ALD/MLD technique is uniquely suited to address the challenge in a scientifically elegant yet industrially feasible way. This technique is derived from the two parent gas-phase thin-film techniques: ALD for inorganic materials (mostly binary metal oxides, sulfides, and nitrides), [12][13][14] and its counterpart MLD for purely organic thin films (e.g., polyimides and polyamides). [15] In both cases, the attractive film growth characteristics are derived from the unique way of separating the different precursor gas pulses. Currently, ALD is the standard thin-film technology in many Atomic layer deposition (ALD) for high-quality conformal inorganic thin films is one of the cornerstones of modern microelectronics, while molecular layer deposition (MLD) is its less-exploited counterpart for purely organic thin films. Currently, the hybrid of these two techniques, i.e., ALD/MLD, is strongly emerging as a state-of-the-art gas-phase route for designer's metal-organic thin films, e.g., for the next-generation energy technologies. The ALD/MLD literature comprises nearly 300 original journal papers covering most of the alkali...

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About the importance of purge time in molecular layer deposition of alucone films

Abstract: The deposition rate and properties of MLD films are for a large part determined by what happens during the reactant exposure step. In some cases, however, the purge step is...

Cited by 18 publications

References 52 publications

Spatial atmospheric pressure molecular layer deposition of alucone films using dimethylaluminum isopropoxide as the precursor

Spatial atmospheric pressure molecular layer deposition of alucone films using dimethylaluminum isopropoxide as the precursor

In situ analysis of growth rate evolution during molecular layer deposition of ultra-thin polyurea films using aliphatic and aromatic precursors

Atomic/Molecular Layer Deposition for Designer's Functional Metal–Organic Materials

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