About the vitreous systems GeTeI and GeTeSi and the influence of microphase separation on the semiconductor behaviour of GeSe glasses

Feltz, A.; Büttner, H.J.; Lippmann, F.; Maul, W

doi:10.1016/0022-3093(72)90118-4

Cited by 41 publications

(10 citation statements)

References 3 publications

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“…Samples préparation and characterization. -GexSel-x glasses can be prepared for germanium concentrations x higher than 1/3, as reported by Baidakov [9] for x 0,40, and later by different authors [1,10,11] for x 0.42. In the present case, the samples with a concentration up to 0.42 are prepared and characterized as described in 1 : amorphous materials are obtained by cooling the quartz cell containing the homogenized liquid of proper composition at a suitable rate.…”

mentioning

confidence: 61%

Raman scattering and local order in GexSe 1 -x glasses for 1/3 ≤ x ≤ 1/2

Tronc¹,

Bensoussan²,

Brenac³

et al. 1977

J. Phys. France

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Having previously studied the local order of GexSe1-x glasses between pure selenium and x = 1/3, we have now prepared samples for 1/3 ≤ x ≤ 1/2. Glassy materials have been obtained up to x = 0.44 and, at higher x values, the samples are made of GeSe crystallites embedded in a glassy matrix of GexSe1-x, with x = 0.41 ± 0.01, the percentage of glass going to zero when x goes to 1/2. Raman scattering measurements have been performed on a set of such samples, at room temperature. The results lead to the following model of local order : for 1/3 ≤ x ≤ 0.42, the glasses have a GeSe2-like local order with four-coordinated Ge atoms and two-coordinated Se atoms, Se—Se bonds and two Ge—Ge bonds per Ge atom being statistically forbidden; for x ≽ 0.43 strong indications appear for a GeSe-like local order, with both three-coordinated Ge and Se atoms : such a type of coordination has never been previously reported for glasses

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mentioning

confidence: 61%

Raman scattering and local order in GexSe 1 -x glasses for 1/3 ≤ x ≤ 1/2

Tronc¹,

Bensoussan²,

Brenac³

et al. 1977

J. Phys. France

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“…Microscopic phase separation has been attributed to the occurrence of double T g and double T c in chalcogenide glasses. It has been suggested that the addition of third components such as Cu, Ag, I, etc., may improve the phase mixing in Ge-Te glasses at microscopic level [7], which can result in single glass transition and single stage crystallization. Figure 3 shows the composition dependence of glass transition temperature and crystallization temperature of Ag x Ge 15 Te 85−x glasses, which indicates that both T g and T c exhibit a minimum at the composition x = 5.…”

Section: Methodsmentioning

confidence: 99%

Effect of topological thresholds on thermal behaviour of germanium telluride glasses containing metallic additive

et al. 1998

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Differential Scanning Calorimetric (DSC) studies on AgxGe15Te85−x glasses have been undertaken over a wide range of compositions, to understand the effect of topological thresholds on thermal properties. It is found that the compositional dependence of glass transition temperature (Tg), crystallization temperature (Tc), activation energy for crystallization (∆E) and thermal stability (∆T ) show anomalies at the rigidity percolation threshold. Unusual variations also observed in different thermal properties at the composition x = 20, clearly establishes the occurrence of chemical threshold in these glasses. PACS. 61.43.-j Disordered solids -61.43.Fs Glasses -65.90.+i Other topics in thermal properties of condensed matter

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“…The Ge-Si-Te ternary has not received much attention in the literature, except in the recent years. Feltz and co-workers 60,61 have characterized its glass-forming region, which consists in a broad region around the GeTe 4 -SiTe 4 join. More recently, Asokan and co-workers have identified that such tellurides can also be interesting candidates for random access memories 62-64 because they exhibit on-and off-reset states in electrical switching phenomena that are enhanced at select compositions.…”

Section: Introductionmentioning

confidence: 99%

Effect of mixed Ge/Si cross-linking on the physical properties of amorphous Ge-Si-Te networks

Gunasekera

Boolchand

Micoulaut

2014

Journal of Applied Physics

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Amorphous GexSixTe1−2x glasses are studied as a function of composition by a combination of experimental and theoretical methods, allowing for a full description of the network structure in relationship with physico-chemical properties. Calorimetric and thermal measurements reveal that such glasses display an anomalous behavior across a range of compositions xc1=7.5% and <x<xc2=9%, in which is manifested a deep minimum in molar volume, non-reversing enthalpy, and liquid fragility. These anomalies allow defining an intermediate phase, where network rigidity onsets as the content x of Group IV atoms (Ge, Si) are increased. The structural manifestation of these anomalies is understood from 119Sn Mössbauer spectroscopy and First Principles Molecular Dynamics at selected compositions (Ge20Te80, Si20Te80, and Ge10Si10Te80). The numerical models reveal the quite different roles played by the modifier or network cross-linker Ge or Si atoms, Si being more tetrahedral in sp3 geometry, whereas Mössbauer spectroscopy shows that the nature of chemical bonding is dramatically changed around x≃ 8%. The precise evolution of the local structure and chemical bonding ultimately allows understanding the origin of the intermediate phase in these complex tellurides.

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About the vitreous systems GeTeI and GeTeSi and the influence of microphase separation on the semiconductor behaviour of GeSe glasses

Cited by 41 publications

References 3 publications

Raman scattering and local order in GexSe 1 -x glasses for 1/3 ≤ x ≤ 1/2

Raman scattering and local order in GexSe 1 -x glasses for 1/3 ≤ x ≤ 1/2

Effect of topological thresholds on thermal behaviour of germanium telluride glasses containing metallic additive

Effect of mixed Ge/Si cross-linking on the physical properties of amorphous Ge-Si-Te networks

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