Abruptness of Semiconductor-Metal Interfaces

Brillson, L. J.; Brucker, C. F.; Stoffel, N. G.; Katnani, A. D.; Margaritondo, G.

doi:10.1103/physrevlett.46.838

Cited by 109 publications

(6 citation statements)

References 8 publications

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“…As the anneal temperature increases to 400°C, a large growth in the Ga oxide peak, at þ1 eV, is seen, and a decrease in the Ga-Ni intensity. This assignment is consistent with interdiffusion between the In 0.53 Ga 0.47 As and Ni layer as has been previously reported for the interaction between Ni and Ga containing semiconductors [34,35]. The subsequent oxidation of the up-diffused Ga, prior to SiN deposition, results in the formation of a surface oxidized overlayer which acts to suppress the Ga-Ni signal.…”

Section: Resultssupporting

confidence: 91%

“…In addition to the oxide growth, the lower BE peak at −0.5 eV is attributed to a Ga-Ni bonding interaction at the surface based on the respective electronegativities of both Ga (1.81) and Ni (1.91) [33]. The reaction between Ga and Ni has been studied previously on GaAs and the observed strong interaction between Ni and Ga [12] was attributed to the large enthalpy of formation for NiGa [34]. As the anneal temperature increases to 400°C, a large growth in the Ga oxide peak, at þ1 eV, is seen, and a decrease in the Ga-Ni intensity.…”

Section: Resultsmentioning

confidence: 99%

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Ni-(In,Ga)As Alloy Formation Investigated by Hard-X-Ray Photoelectron Spectroscopy and X-Ray Absorption Spectroscopy

et al. 2014

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The electrical, chemical, and structural interactions between Ni films and In 0.53 Ga 0.47 As for source-drain applications in transistor structures have been investigated. It was found that for thick (> 10 nm) Ni films, a steady decrease in sheet resistance occurs with increasing anneal temperatures, however, this trend reverses at 450°C for 5 nm thick Ni layers, primarily due to the agglomeration or phase separation of the Ni-(In,Ga) As layer. A combined hard-x-ray photoelectron spectroscopy (HAXPES) and x-ray absorption spectroscopy (XAS) analysis of the chemical structure of the Ni-(In,Ga)As alloy system shows: (1) that Ni readily interacts with In 0.53 Ga 0.47 As upon deposition at room temperature resulting in significant interdiffusion and the formation of NiIn, NiGa, and NiAs alloys, and (2) the steady diffusion of Ga through the Ni layer with annealing, resulting in the formation of a Ga 2 O 3 film at the surface. The need for the combined application of HAXPES and XAS measurements to fully determine chemical speciation and sample structure is highlighted and this approach is used to develop a structural and chemical compositional model of the Ni-(In,Ga)As system as it evolves over a thermal annealing range of 250 to 500°C.

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Section: Resultssupporting

confidence: 91%

Section: Resultsmentioning

confidence: 99%

Ni-(In,Ga)As Alloy Formation Investigated by Hard-X-Ray Photoelectron Spectroscopy and X-Ray Absorption Spectroscopy

et al. 2014

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“…These experimental results indicate that deposition of metal stabilizes (or pins) the Fermi level at the interface. There were several attempts to understand this phenomenon in terms of screening [9], formation of new phases [10,11 ], or formation of localized states at the M-S interface. N possible localized states and the mechanisms of their formation have been hotly debated issues.…”

Section: Defecf Induced Stabilization Of Fermi Energymentioning

confidence: 99%

Defect Reactions at Metal-Semiconductor and Semiconductor-Semiconductor Interfaces

Walukiewicz

1989

MRS Proc.

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A recently proposed, new approach to the problem of native defect formation in compound semiconductors is presented. The approach is based on the concept of amphoteric native defects. It is shown that the defect formation energy as well as structure and properties of simple native defects depend on the location of the Fermi level with respect to an internal energy reference: the Fermi level stabilization energy. The known location of the stabilization energy determines the electronic part of the defect formation energy and allows for a quantitative description of a variety of phenomena including: the formation of defects at metal-semiconductor interfaces, doping induced superlattice intermixing and limitations of free carrier concentrations in semiconductors.

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“…2 In the past several years, with the development of microanalytical techniques, it has been found that the interaction at a metal-semiconductor interface is generally not weak and reactions frequently occur, resulting in atomistic changes of the layer, e.g., compound formation, defect generation, and interatomic mixing. 3 "" 6 These phenomena modify the stoichiometry, atomic environment, and microstructure of the interface, which can change the basic nature of the interface states.…”

mentioning

confidence: 99%

Electronic states at silicide-silicon interfaces

et al. 1986

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A capacitance-spectroscopy technique based on accurate phase detection has been developed to measure the unoccupied states at silicide-silicon contacts. For Pd and Ni silicides, a dispersed group of states was found to exist in the Si band gap with its peak at a level 0.63-0.65 eV above the valence-band edge. Siiicide formation alters their density and distribution to reflect the changes in the structural perfection and barrier height. Observations on the epitaxial NiSi 2 -Si(lll) interfaces reveal that the characteristics of these states are controlled by the degree of structural perfection of the interface instead of the specific epitaxy. This seems to be the first correlation of the structural and electronic properties of a silicide-silicon interface.

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Abruptness of Semiconductor-Metal Interfaces

Cited by 109 publications

References 8 publications

Ni-(In,Ga)As Alloy Formation Investigated by Hard-X-Ray Photoelectron Spectroscopy and X-Ray Absorption Spectroscopy

Ni-(In,Ga)As Alloy Formation Investigated by Hard-X-Ray Photoelectron Spectroscopy and X-Ray Absorption Spectroscopy

Defect Reactions at Metal-Semiconductor and Semiconductor-Semiconductor Interfaces

Electronic states at silicide-silicon interfaces

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