1993
DOI: 10.1103/physreva.47.4786
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Absolute cross sections for electron-impact single ionization ofSi+andSi2+

Abstract: Absolute cross sections for electron-impact single ionization of Si+ and Si + have been measured using crossed beams of ions and electrons and calculated using a configuration-average distorted-wave method. Corrections have been made for metastable components and small fractions of nitrogen impurities in the incident ion beams. Excitation-autoionization measurably enhances the cross sections of both Si+ and Si +. Ionization rate coef5cients and fitting parameters are presented for the experimental data.PACS nu… Show more

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Cited by 24 publications
(35 citation statements)
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“…For Si ii, Djurić et al (1993b) pointed out the strong role of EA through the 2p 6 3s3pnl levels. These EA transitions are significantly greater than the DI cross sections at low energies.…”
Section: The Aluminum Isoelectronic Sequencementioning
confidence: 99%
“…For Si ii, Djurić et al (1993b) pointed out the strong role of EA through the 2p 6 3s3pnl levels. These EA transitions are significantly greater than the DI cross sections at low energies.…”
Section: The Aluminum Isoelectronic Sequencementioning
confidence: 99%
“…For Si iii and S v the measurements of Djuric et al (1993b) and Howald et al (1986), respectively, were omitted because the measurements present clear evidence of metastable ions.…”
Section: Di: 3s Cross-sectionsmentioning
confidence: 99%
“…Indirect processes, involving the production of intermediate excited states, also contribute to the total ionization cross section. In spite of these complications, the degree of agreement between theory and experiment today is very good [44,45], often to within 10 or 20%. Figure 9 compares the measured and calculated cross sections for the indirect and direct ionization of Scandium III(Sc 2+ ) to Scandium Sc 3+ ) [46] and the Lotz semiempirical scaling for direct ionization [48].…”
Section: Impurity Radiationmentioning
confidence: 99%