Absorption Coefficient of Bulk III-V Semiconductor Materials: A Review on Methods, Properties and Future Prospects

Lee, Hui Jing; Gamel, Mansur Mohammed Ali; Ker, Pin Jern; Jamaludin, M. Z.; Wong, Yin How; David, J.P.R.

doi:10.1007/s11664-022-09846-7

Cited by 14 publications

(3 citation statements)

References 174 publications

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“…As seen below, the spatial contrast profiles broaden as the SE signal intensity decreases. Both lobes peak at a time delay of 200 ps, and considering that the absorption coefficient of InGaAsP is on the order of magnitude of 10 5 cm −1 at 515 nm [49,50], a vertical drift velocity caused by an SPV of around 5 × 10 4 cm/s is obtained.…”

Section: Resultsmentioning

confidence: 99%

Spatiotemporal Visualization of Photogenerated Carriers on an Avalanche Photodiode Surface Using Ultrafast Scanning Electron Microscopy

Tian,

Yang,

et al. 2024

Nanomaterials

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The spatiotemporal evolution of photogenerated charge carriers on surfaces and at interfaces of photoactive materials is an important issue for understanding fundamental physical processes in optoelectronic devices and advanced materials. Conventional optical probe-based microscopes that provide indirect information about the dynamic behavior of photogenerated carriers are inherently limited by their poor spatial resolution and large penetration depth. Herein, we develop an ultrafast scanning electron microscope (USEM) with a planar emitter. The photoelectrons per pulse in this USEM can be two orders of magnitude higher than that of a tip emitter, allowing the capture of high-resolution spatiotemporal images. We used the contrast change of the USEM to examine the dynamic nature of surface carriers in an InGaAs/InP avalanche photodiode (APD) after femtosecond laser excitation. It was observed that the photogenerated carriers showed notable longitudinal drift, lateral diffusion, and carrier recombination associated with the presence of photovoltaic potential at the surface. This work demonstrates an in situ multiphysics USEM platform with the capability to stroboscopically record carrier dynamics in space and time.

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Section: Resultsmentioning

confidence: 99%

Spatiotemporal Visualization of Photogenerated Carriers on an Avalanche Photodiode Surface Using Ultrafast Scanning Electron Microscopy

Tian,

Yang,

et al. 2024

Nanomaterials

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“…The absorption coefficient determines the distance a particular wavelength photon travels before being absorbed. It depends on the material and the wavelength of radiation [81]. The absorption coefficient is related to the extinction coefficient (k) by:…”

Section: Absorption Coefficient Of Materialsmentioning

confidence: 99%

Advancing efficiency: comprehensive strategies for minimizing optical and electrical losses in group III-V compound tandem solar cells for future photovoltaic technology

Soley,

Verma,

Khatri

et al. 2024

Eng. Res. Express

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Global energy consumption is rising, and fossil resources are dwindling, driving demand for clean, affordable energy. Solar power is the most promising alternative energy source and can meet future energy needs. In terrestrial photovoltaics, low-cost Silicon solar cells dominate. However, as the single junction silicon solar cells are approaching their highest achievable efficiency of 30%, high-efficiency, “group III-V Compound” semiconductor tandem solar cells are being considered as an alternative energy source. The absorption capacity of the wide range of solar radiation photons enables them to achieve high efficiency. However, further improvement in efficiency is constrained due to the various loss mechanisms that occur during the physical process of converting light to electrical energy in “group III-V compound” tandem solar cells. Extensive research is being conducted to develop solution approaches to minimize the loss mechanisms in order to improve efficiency. Although many published review articles have studied the research progress of “group III-V compound” solar cells based on fabrication techniques, applications, status, and challenges, there is no article mentioning a comprehensive and comparative study of strategies employed by researchers to enhance efficiency in “group III-V compounds” tandem solar cells considering loss mechanisms. The present study focuses on discussing the fundamental losses in “group III-V compounds” tandem solar cells and various strategies employed by researchers to reduce optical and electrical losses to improve the efficiency of these devices so that they may be employed in terrestrial applications.

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“…The growth and synthesis of semiconductors have been widely studied to develop optoelectronics applications such as photodetectors and solar cells. Currently, III-V semiconductors are a robust semiconductor family used for high-speed and high-frequency applications [1,2], where their particular properties have allowed the development of high carrier mobility devices [3,4], solar-blind photodetectors [5,6], UV-light emitting diodes [7], solar cells [8], and high-speed diodes [9]. On the other hand, oxide-based semiconductors also constitute an alternative by their combination of electrical conductivity, high electron mobility, and visible-light transparency [10,11], where oxide synthesis is addressed from low-cost techniques [12].…”

Section: Introductionmentioning

confidence: 99%

Study and characterization of the nanotextured Ga₂O₃-GaOOH formations synthesized via thermal oxidation of GaAs in ambient air

Solís-Cisneros,

Vilchis,

Hernández-Trejo

et al. 2023

Semicond. Sci. Technol.

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In this work, we present the characterization of a UV-sensitive material based on Ga2O3-GaOOH, which was obtained through the thermal oxidation of GaAs wafers in ambient air to achieve Ga2O3. The material’s oxidation mechanism was thoroughly examined using structural, compositional, and optical approaches. X-ray diffraction analysis identified the presence of the β-Ga2O3 crystalline phase, with both in-plane and out-of-plane preferred orientations, along with crystalline inclusions attributed to GaOOH. Furthermore, energy-dispersive spectroscopy confirmed the uniform sublimation of Arsenic, as evidenced by elemental mapping, while Fourier-transform infrared spectroscopy suggested the inclusion of −OH bonds. Surface analysis was carried out by field emission scanning electron microscopy and atomic force microscopy, revealing a grain size of approximately 20 nm. Finally, UV-Vis characterization unveiled a bandgap ranging from 2.9 to 3.9 eV, indicative of the material’s potential for UV-sensitive applications. Overall, the results demonstrate the consistency and reliability of the oxidation process, providing valuable insights into the properties of the Ga2O3-GaOOH material for potential technological advancements.

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Absorption Coefficient of Bulk III-V Semiconductor Materials: A Review on Methods, Properties and Future Prospects

Cited by 14 publications

References 174 publications

Spatiotemporal Visualization of Photogenerated Carriers on an Avalanche Photodiode Surface Using Ultrafast Scanning Electron Microscopy

Spatiotemporal Visualization of Photogenerated Carriers on an Avalanche Photodiode Surface Using Ultrafast Scanning Electron Microscopy

Advancing efficiency: comprehensive strategies for minimizing optical and electrical losses in group III-V compound tandem solar cells for future photovoltaic technology

Study and characterization of the nanotextured Ga₂O₃-GaOOH formations synthesized via thermal oxidation of GaAs in ambient air

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Absorption Coefficient of Bulk III-V Semiconductor Materials: A Review on Methods, Properties and Future Prospects

Cited by 14 publications

References 174 publications

Spatiotemporal Visualization of Photogenerated Carriers on an Avalanche Photodiode Surface Using Ultrafast Scanning Electron Microscopy

Spatiotemporal Visualization of Photogenerated Carriers on an Avalanche Photodiode Surface Using Ultrafast Scanning Electron Microscopy

Advancing efficiency: comprehensive strategies for minimizing optical and electrical losses in group III-V compound tandem solar cells for future photovoltaic technology

Study and characterization of the nanotextured Ga2O3-GaOOH formations synthesized via thermal oxidation of GaAs in ambient air

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Product

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Study and characterization of the nanotextured Ga₂O₃-GaOOH formations synthesized via thermal oxidation of GaAs in ambient air