Absorption in<i>p</i>-type Si-SiGe strained quantum-well structures

Corbin, E.; Wong, K.B.; Jaroš, M.

doi:10.1103/physrevb.50.2339

Cited by 34 publications

(13 citation statements)

References 7 publications

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“…As shown in Ref. 11 for strained SiGe/Si quantum wells, the HH 1 -HH 2 intersubband transition energy that depends on the barrier height of the quantum well significantly decreases when the barrier height is decreased. Similarly, the energy of the bound-to-continuum transition decreases as the barrier height is reduced.…”

mentioning

confidence: 66%

Intersubband absorption in Si/Si1−x−yGexCy quantum wells

Boucaud¹,

Lourtioz²,

Julien³

et al. 1996

Applied Physics Letters

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Intersubband absorption in the valence band of Si–Si1−x−yGexCy multiquantum wells is reported. The quantum wells with x≊17% and y≊1% and thicknesses around 3 nm are grown pseudomorphically by rapid thermal chemical vapor deposition on Si(001). The carbon is incorporated in substitutional site using methylsilane as the gas precursor. The quantum wells exhibit near-band-edge photoluminescence with no-phonon and phonon-assisted replica. The energy position of the no-phonon and phonon-assisted replica are shifted to high energy with respect to bulk alloys due to the quantum confinement of the first heavy hole subband. The intersubband absorption between confined subbands is measured in a multipass waveguide geometry under optical pumping. Absorptions for light with an electric field polarized either parallel or perpendicular to the growth axis are observed in both SiGe and SiGeC quantum wells. The absorptions peak at 100 and 130 meV and involve bound-to-bound and bound-to-continuum transitions. The spectral positions of the intersubband absorptions are discussed from numerical calculations accounting for the band gap variation induced by carbon.

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mentioning

confidence: 66%

Intersubband absorption in Si/Si1−x−yGexCy quantum wells

Boucaud¹,

Lourtioz²,

Julien³

et al. 1996

Applied Physics Letters

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“…N.I. absorption occurs between HH1-SO1 or HH1-LH2 and lower bands [4]. Our expression for the linear susceptibility [4] includes the relaxation processes in a phenomological way, by means of a damping constant, , in the denominator.…”

Section: Comparison Of Calculated and Experimental Resultsmentioning

confidence: 99%

Optical spectra and Auger recombination in SiGe/Si heterostructures in 10 μm range of wavelengths

Corbin

Williams

Wong

et al. 1996

Superlattices and Microstructures

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“…Due to the coupling of heavy-hole (HH), light-hole (LH), and spin-orbit split-off (SO) bands, such p-type quantum wells exhibit a much more complex band structure. However, as a consequence of this coupling, some optical transitions are also allowed for xy-polarized radiation [8][9][10][11][12][13][14][15]. This is why p-type quantum wells are well suited for normal-incidence infrared detectors [13][14][15] and SiGe quantum wells grown pseudomorphically on Si are a good candidate for IR device applications.…”

Section: General Considerationsmentioning

confidence: 97%

Intersubband Transitions, Infrared Detectors, and Optical Nonlinearities in SiGe Multiquantum Wells

et al. 1996

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A survey is given about the potential use of Si/SiGe heterostructures for applications in the mid-infrared spectral range. We discuss theoretical foundations and experiments of intersubband absorption in p-type Si/SiGe quantum wells and show that due to the complex valence-band structure, normal-incidence absorption can be observed. On the basis of these quantum wells, mid-infrared detectors were fabricated and characterized in terms of responsivity, dark current and detectivity. In asymmetric, compositionally stepped quantum wells second harmonic generation of C02 laser radiation has been demonstrated.

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Absorption inp-type Si-SiGe strained quantum-well structures

Cited by 34 publications

References 7 publications

Intersubband absorption in Si/Si1−x−yGexCy quantum wells

Intersubband absorption in Si/Si1−x−yGexCy quantum wells

Optical spectra and Auger recombination in SiGe/Si heterostructures in 10 μm range of wavelengths

Intersubband Transitions, Infrared Detectors, and Optical Nonlinearities in SiGe Multiquantum Wells

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