Absorption of gas-phase atomic hydrogen by Si(100): Effect of surface atomic structures

Maeng, Jae Yeol; Kim, Sehun; Jo, Sung-Kee; Fitts, W. P.; White, James B.

doi:10.1063/1.1379989

Cited by 12 publications

(12 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…With each Si surface atom accommodating two H atoms, a fully Hsaturated surface is a (1 1) dihydride surface [9][10][11]. There also exists an intermediate (3 1) phase in which rows of monohydride dimers are interlaced with rows of dihydrides [9,[11][12][13][14]. Theory has shown that the (3 1) phase is more stable than separate (1 1) dihydride and (2 1) monohydride regions or other periodic patterns, but the free energy difference is relatively modest [15].…”

mentioning

confidence: 99%

Atomistic View of the Recombinative Desorption ofH2fromH/Si(100)

et al. 2005

View full text Add to dashboard Cite

Scanning tunneling microscopy is employed to investigate the recombinative desorption of H2 from hydrogenated Si(100) surfaces consisting of dihydride (SiH2) and monohydride (SiH) surface species organized in (1 x 1), (3 x 1), and (2 x 1) configurations. The results show that desorption from dihydrides involves a pair of neighboring dihydrides linked along the tetrahedral bond direction. Dihydrides in (3 x 1) domains are separated in the same direction by monohydrides, and desorption from a pair is geometrically impossible. The same desorption mechanism nevertheless applies via first a position switching of dihydrides with neighboring monohydrides.

show abstract

mentioning

confidence: 99%

Atomistic View of the Recombinative Desorption ofH2fromH/Si(100)

et al. 2005

View full text Add to dashboard Cite

show abstract

“…It has been well established that both Si(100) and Ge(100) surfaces reconstruct to make (2Í1) surfaces, on which each surface atom has only one dangling bond. Such dangling bonds are readily passivated by H(g) with a nearly unity sticking probability, leading to well-ordered monohydride-saturated surfaces, Si(100)-2 × 1:H [8][9][10][11][12] and Ge(100)-2 × 1:H [16][17][18][19][27][28]. Schematic views of the unit cell of a diamond crystal lattice and the (100)-2 × 1:H surface are drawn in Figure 1.…”

Section: Resultsmentioning

confidence: 99%

“…The relative importance of theses reactions is determined mostly by the substrate temperature. While the surface etching of Si(100) by H(g) is slow and anistropic at moderately elevated temperatures, it becomes faster and rather isotropic at room temperature [8,9]. At even lower temperatures, subsurface Si(100) hydrogenation/amorphization is a dominant reaction channel [12].…”

Section: Introductionmentioning

confidence: 99%

“…At even lower temperatures, subsurface Si(100) hydrogenation/amorphization is a dominant reaction channel [12]. The Si(100) surface becomes rougher on the atomic sale at elevated temperatures as a result of anisotropic etching by H(g) [9]. It was found that the surface roughened by H(g) etching provides a low-barrier channel for direct H(g) absorption by Si(100) [8].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Surface Reactions of Atomic Hydrogen with Ge(100) in Comparison with Si(100)

2017

Appl. Sci. Converg. Technol.

View full text Add to dashboard Cite

The reactions of thermal hydrogen atoms H(g) with the Ge(100) surface were examined with temperatureprogrammed desorption (TPD) mass spectrometry. Concomitant H 2 and CH 4 TPD spectra taken from the H(g)irradiated Ge(100) surface were distinctly different for low and high H(g) doses/substrate temperatures. Reactions suggested by our data are: (1) adsorbed mono(β 1)-/di-hydride(β 2)-H(a) formation; (2) H(a)-by-H(g) abstraction; (3) GeH 3 (a)-by-H(g) abstraction (Ge etching); and (4) hydrogenated amorphous germanium a-Ge:H formation. While all these reactions occur, albeit at higher temperatures, also on Si(100), H(g) absorption by Ge(100) was not detected. This is in contrast to Si(100) which absorbed H(g) readily once the surface roughened on the atomic scale. While this result is rather against expectation from its weaker and longer Ge-Ge bond as well as a larger lattice constant, we attribute the absence of direct H(g) absorption to insufficient atomic-scale surface roughening and to highly efficient subsurface hydrogenation at moderate (>300 K) and low (≤300 K) temperatures, respectively.

show abstract

“…1 Interfacial defect states 2-10 and surface roughening [11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27] are the cause of many problems in gate oxide processing. 1 Interfacial defect states 2-10 and surface roughening [11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27] are the cause of many problems in gate oxide processing.…”

Section: Introductionmentioning

confidence: 99%

The influence of bond flexibility and molecular size on the chemically selective bonding of In2O and Ga2O on GaAs(001)-c(2×8)/(2×4)

Hale

Sexton

Winn

et al. 2004

The Journal of Chemical Physics

View full text Add to dashboard Cite

The surface structures formed upon deposition of In2O and Ga2O by molecular beam epitaxy onto the arsenic-rich GaAs(001)-c(2 x 8)/(2 x 4) surface have been studied using scanning tunneling microscopy and density functional theory. In2O initially bonds, with indium atoms bonding to second layer gallium atoms within the trough, and proceeds to insert into or between first layer arsenic dimer pairs. In contrast, Ga2O only inserts into or between arsenic dimer pairs due to chemical site constraints. The calculated energy needed to bend a Ga2O molecule approximately 70 degrees, so that it can fit into an arsenic dimer pair, is 0.6 eV less than that required for In2O. The greater flexibility of the Ga2O molecule causes its insertion site to be 0.77 eV more exothermic than the In2O insertion site. This result shows that although trends in the periodic table can be used to predict some surface reactions, small changes in atomic size can play a significant role in the chemistry of gas/surface reactions through the indirect effects of bond angle flexibility and bond length stiffness.

show abstract

Absorption of gas-phase atomic hydrogen by Si(100): Effect of surface atomic structures

Cited by 12 publications

References 13 publications

Atomistic View of the Recombinative Desorption ofH2fromH/Si(100)

Atomistic View of the Recombinative Desorption ofH2fromH/Si(100)

Surface Reactions of Atomic Hydrogen with Ge(100) in Comparison with Si(100)

The influence of bond flexibility and molecular size on the chemically selective bonding of In2O and Ga2O on GaAs(001)-c(2×8)/(2×4)

Contact Info

Product

Resources

About