Absorption spectra of SiCl4, Si2Cl6, SiF3CH3 and GeF4 in the VUV region

Ibuki, Toshio; Washida, Nobuaki; Itoh, Uichi; Toyoshima, Yasutake; Onuki, Hideo

doi:10.1016/0009-2614(87)80284-1

Cited by 30 publications

(16 citation statements)

References 11 publications

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“…The incident (IS) and reflected shock (RS) cause a step-like increase of the absorption to a level of about 50%. All results of molecular SiCl 4 absorption of L ␣ radiation obtained from a total of 15 individual shock tube experiments are summarized in Figure 2 together with room temperature results of Ibuki et al [10]. The nearly temperature independent absorption cross section of both sets of experiments can be approximated by:…”

Section: Resultsmentioning

confidence: 99%

A shock tube study of the reaction of H atoms with SiCl4

Catoire¹,

Woiki²,

Roth³

1997

Int. J. Chem. Kinet.

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ABSTRACT:The reaction of H atoms with SiCl 4 was studied behind reflected shock waves at temperatures between 1530 K and 1730 K and pressures around 1.5 bar by applying atomic resonance absorption spectroscopy (ARAS) for time resolved measurements of H atoms at the L ␣ -line. The thermal decomposition of a few ppm ethyl iodide (C 2 H 5 I) was used as a Hatom source. In the presence of a high excess of the molecular reactant SiCl 4 a slow consumption of H was observed, which follows a pseudo-first-order rate law. Rate coefficient for the consumption of H by the reaction: (R1) was determined to be:.

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Section: Resultsmentioning

confidence: 99%

A shock tube study of the reaction of H atoms with SiCl4

Catoire¹,

Woiki²,

Roth³

1997

Int. J. Chem. Kinet.

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“…The problem is that SiCl 4 also absorbs the resonance radiation of Cl-atoms at the given wavelength significantly. The absorption cross section found at 1300 to 1400 K in Ar mixtures containing 100, 400, or 500 ppm SiCl 4 is equal to that given by Ibuki et al [8] for room temperature:…”

Section: Atom Aras Measurementsmentioning

confidence: 89%

Kinetics of the initiation step of the thermal decomposition of SiCl4

Catoire

Woiki²,

Roth

1997

Int. J. Chem. Kinet.

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The initiation reaction of the thermal decomposition of silicon tetrachloride (R1) was studied behind reflected shock waves at temperatures between 1550 K and 2370 K and pressures between 1 and 1.5 bar. Atomic resonance absorption spectrometry (ARAS) was applied for time-resolved measurements of H atoms at the L ␣ -line in SiCl 4 /H 2 /Ar systems. Additional experiments were performed in the SiCl 4 /Ar system following the absorption of SiCl 4 at the L ␣ -line. Rate coefficients for the reaction (R1) were determined to be:The choice between two possible alternatives of the first decomposition step, namely elimination of either Cl 2 or Cl, has been made in favor of the second reaction on the basis of kinetic and energetic considerations.

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“…Silicon tetrafluoride molecules have no optical absorption in the wavelength range 110-200 nm. 15 Thus, the VUV absorption band of Si-F bonds is considered to occur at energies higher than the band gap of silica. Fluorine ions are incorporated into the silica network in the form of Si-F bonds.…”

Section: Tohru Ogawamentioning

confidence: 99%

Effects of fluorine dimer excimer laser radiation on the optical transmission and defect formation of various types of synthetic SiO2 glasses

Hosono

Mizuguchi

Kawazoe

et al. 1999

Applied Physics Letters

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Changes in the optical absorption and the formation of point defects in three types of synthetic SiO2 glasses, wet (OH content; 120 ppm), dry (OH content <1 ppm), and fluorine (F)-doped (∼1 mol %) SiO2 glasses, by irradiation with fluorine dimer (F2) excimer laser light pulses (∼8 mJ/cm2/pulse×3.6×105 pulses) were examined by various spectroscopic methods. Intense optical absorptions were induced in the wet and dry silicas in the range of 4–8 eV, whereas the intensity of absorptions induced in the F-doped silica was smaller by an order of magnitude than that in the F-free glasses. The optical transmission at the wavelength of 157 nm after the irradiation was F-doped silica≫wet silica>dry silica. The dominant electron spin resonance-active defect in the irradiated specimens was the nonbridging oxygen-hole center (NBOHC) for the wet silica, or the E′ center in the dry silica. The concentration of NBOHCs or E′ centers in the F-doped silica was lower by an order of magnitude than that in the wet or dry silica. The present results suggest the possibility of using F-doped silica glasses as photomask materials for F2 laser lithography.

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Absorption spectra of SiCl4, Si2Cl6, SiF3CH3 and GeF4 in the VUV region

Cited by 30 publications

References 11 publications

A shock tube study of the reaction of H atoms with SiCl4

A shock tube study of the reaction of H atoms with SiCl4

Kinetics of the initiation step of the thermal decomposition of SiCl4

Effects of fluorine dimer excimer laser radiation on the optical transmission and defect formation of various types of synthetic SiO2 glasses

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