Absorptive and Dispersive Switching in a Three Region InGaAsP Semiconductor Laser Amplifier at 1·57 μm

Barnsley, P.E.; Marshall, Ian; Wickes, H.J.; Fiddyment, P.J.; Regnault, J.C.; Devlin, William J.

doi:10.1080/09500349014550651

Cited by 4 publications

(1 citation statement)

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“…Also shown in Fig. 4 is the typical variation with detuning of the amplifier gain and the absorptive switching threshold power (amplifier of ref 12). Zero detuning is defined as the signal frequency where maximum gain was observed (this will not be the same as the small signal gain peak frequency since carrier density effects will shift the VP mode position.…”

Section: Properties Of Absorptive Nloa'smentioning

confidence: 99%

<title>Absorptive nonlinear semiconductor amplifiers for fast optical switching</title>

et al. 1991

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We demonstrate optical switching using split contact semiconductor absorptive nonlinear optical amplifiers. All-optical time switching of 500 MBit/s data with a rise time of 100 ps has been demonstrated. Fall times of 85 ps can be achieved by reverse biasing the absorber section of the amplifier. The switch had a minimum switching threshold of -1 iW, a switch gain of -1O dB and can operate over a 60 nm wavelength range around 1 .55 pm. Such a switch may be suitable for application in packet switched networks with multi-GBit/s header speeds. Wavelength switching using the same nonlinear amplifier is also demonstrated. 400 MBit/s data was converted over 35THz from 1 .3 1im to wavelengths between 1 .53 .tm and 1 .585 pm.The minimum power at 1 .3 1 jim required was -'60 iW. Such nonlinear optical amplifiers can give added flexibility in both TDM and WDM systems and are therefore likely to play a major role in future all-optical networks.

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Section: Properties Of Absorptive Nloa'smentioning

confidence: 99%