Abundant topological states in silicene with transition metal adatoms

Zhang, Jiayong; Zhao, Bin; Yang, Zhongqin

doi:10.1103/physrevb.88.165422

Cited by 65 publications

(64 citation statements)

References 41 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The band gaps opened at the Γ points by the atomic SOC in Fig. 4 (a)-(c) are 22.4, 8.6, and 67.9 meV, respectively, much larger than the usual gaps opened with band inversion mechanism [15][16][17][18][19]. And global gaps exist in Fig.…”

Section: B Band Structures and Berry Curvaturesmentioning

confidence: 99%

“…Plenty of theoretical proposals have been raised to produce the QAH effect, including magnetic atom doped topological insulator films [13,14], graphene (silicene) based systems [15][16][17][18][19], and 2D organic material systems [20]. Fantastically, the experimental realization of the QAH effect was reported in the magnetic thin films of Cr-or V-doped (Bi,Sb)2Te3 topological insulators [21,22].…”

Section: Introductionmentioning

confidence: 99%

“…The forming mechanism of the QAH gap was primarily ascribed to the band inversion, in which the inversion of the valence and conduction bands with the same spin states (up-up or down-down) [13] or different 3 spin states (up-down or down-up) [14] occurs. A number of the Chern insulators based on the graphene, silicene, and some other materials [15][16][17][18][19]23] can be understood by the band inversion mechanism proposed in Ref. [14], where the band inversion is primarily caused by the magnetic exchange field and the SOC merely opens the gap of the system.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Chern insulators without band inversion in MoS2 monolayers with 3d adatoms

et al. 2017

Self Cite

View full text Add to dashboard Cite

Electronic and topological properties of MoS2 monolayers endowed with 3d transition metal (TM) adatoms (V-Fe) are explored by using ab initio methods and k· p models. Without the consideration of the Hubbard U interaction, the V, Cr, and Fe adatoms tend to locate on the top of the Mo atoms, while the most stable site for the Mn atom is at the hollow position of the Mo-S hexagon. After the Hubbard U is applied, the most stable sites of all the systems become the top of the Mo atoms.Chern insulators without band inversion are achieved in these systems. The V and Fe adsorption systems are the best candidates to produce the topological states. The k· p model calculations indicate that these topological states are determined by the TM magnetism, the C3v crystal field from the MoS2 substrate, and the TM atomic spin-orbit coupling (SOC). The special two-meron pseudospin texture is found to contribute to the topology. The apparent difference between the Berry curvatures for the V and Fe adsorption systems are also explored. Our results widen the understanding to the Chern insulators and are helpful for the applications of the MoS2 monolayers in the future electronics and spintronics.

show abstract

Section: B Band Structures and Berry Curvaturesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Chern insulators without band inversion in MoS2 monolayers with 3d adatoms

et al. 2017

Self Cite

View full text Add to dashboard Cite

show abstract

“…While this is difficult to realize in graphene, the stronger SOC and buckled lattice of silicene or germanene provide an avenue to access and control the valley degree of freedom [24]. Spin and valley polarization can be achieved by means of doping and decoration with certain 3d or 4d transition metals [25,26] as well as by an external electric field [4,5,27]. However, interaction with the substrate is typically detrimental, because the electronic states * udo.schwingenschlogl@kaust.edu.sa are perturbed [28].…”

Section: Introductionmentioning

confidence: 99%

Proximity-induced spin-valley polarization in silicene or germanene on F-doped WS2

2016

View full text Add to dashboard Cite

Silicene and germanene are key materials for the field of valleytronics. However, interaction with the substrate, which is necessary to support the electronically active medium, becomes a major obstacle. In the present work, we propose a substrate (F-doped WS 2 ) that avoids detrimental effects and at the same time induces the required valley polarization, so that no further steps are needed for this purpose. The behavior is explained by proximity effects on silicene or germanene, as demonstrated by first-principles calculations. Broken inversion symmetry due to the presence of WS 2 opens a substantial band gap in silicene or germanene. F doping of WS 2 results in spin polarization, which, in conjunction with proximity-enhanced spin-orbit coupling, creates sizable spin-valley polarization.

show abstract

“…[25][26][27][28][29] When Xianqing Lin and Jun Ni showed that there is much stronger binding of metal adatoms to silicene than to graphene, 30 the effects of adsorption and absorption of foreign atoms on silicene and SiNR were investigated progressively, theoretically and experimentally. 10,[30][31][32][33][34][35][36][37] Initially, Stone-Wales defects and the doping of B, N, P and Al were the phenomena and elements studied to alter the electronic properties of silicene and silicene nanoribbons. [38][39][40][41][42] Luan et al found 100% spin polarization at the Fermi level in a spin gapless semiconductor when the B-N bonded pair was substituted at the edge or subedge sites.…”

mentioning

confidence: 99%

Electronic, magnetic and transport properties of silicene armchair nanoribbons substituted with monomer and dimer of Fe atom

2018

View full text Add to dashboard Cite

This study employed density functional theory calculations to investigate the structural, electronic and magnetic properties of an armchair silicene nanoribbon (ASiNR) substituted with a monomer and a dimer of Fe atom. As a result, the direct band gap of pristine ASiNR turns into a smaller indirect band gap by substituting an Fe atom in the proper position. The magnetic moment of doped Fe reduces and the structure keeps its nonmagnetic property. The substitution of the Fe-dimer can change the pristine ASiNR from a nonmagnetic semiconductor to a magnetic half-metal, which is favorable for spintronic devices. Two external electric fields were applied to the structure substituted with the Fe-dimer and electronic properties were studied in this situation. It was shown that the Fe-dimer substituted ASiNR is such a versatile material that a band gap can be tuned by using an external transverse electric field. Furthermore, the transport properties of these two structures were studied with non-equilibrium Greens function formalism. It is intriguing that single-spin negative differential resistance was observed in the Fe-dimer doped ASiNR.

show abstract

Abundant topological states in silicene with transition metal adatoms

Cited by 65 publications

References 41 publications

Chern insulators without band inversion in MoS2 monolayers with 3d adatoms

Chern insulators without band inversion in MoS2 monolayers with 3d adatoms

Proximity-induced spin-valley polarization in silicene or germanene on F-doped WS2

Electronic, magnetic and transport properties of silicene armchair nanoribbons substituted with monomer and dimer of Fe atom

Contact Info

Product

Resources

About