AC and dielectric properties of vacuum evaporated InTe bilayer thin films

Temperature-dependent dielectric properties of Au/Si 3 N 4 /n-Si (metal—insulator—semiconductor) structures

“…These curves closely resemble those predicted by the Debye relaxation model for orientational polarization. [41] Furthermore, the decreases in ε and ε with the increasing frequency are explained by the fact that as the frequency is raised, the interfacial dipoles have less time to orient themselves in the direction of the alternating field. [38][39][40] Figure 4 shows the temperature dependences of ac conductivity (σ ac ) measured at two frequencies (100 kHz and 1 MHz).…”

“…The increase in σ ac with temperature increasing is attributed to the impurities or dislocations at metal/semiconductor interface. [38][39][40][41][42][43] Further-more, the frequency dependence of conductivity in the relaxation phenomenon are caused by the the mobile charge carriers. In the case of a thermally activated electrical conduction, the temperature dependence of ac conductivity can be explained according to the Arrhenius equation…”

Thickness dependence on structural, dielectric and AC conduction studies of vacuum evaporated Sr doped BaTiO3 thin films

“…At room temperature n values range from 0.96 to 1.4. In the second region (>400 Hz), nearly all the curves approximate to a square law dependence on frequency and show less dependence on temperature at higher frequencies [25]. This behavior reveals that the mechanism for AC conduction is hopping of charge carriers.…”

Composite metal oxide semiconductor based photodiodes for solar panel tracking applications

“…The peak intensity is the lowest at 1 MHz. This indicates that at the higher frequencies, the interface charges do not make any contribution to the capacitance of the diodes [16,17,[38][39][40][41][42][43][44]. Also, the peak in C-V curves of the photodiodes is changed with Cu 2 O contents.…”