Ac Composite Back Surface Recombination Velocity as Applied to N+/P/P+ Silicon Solar Cell Optimum Thickness Base Determination

Diop, Gora; Gueye, Sega; Sow, Ousmane; Bâ, Alassane; Ba, Mamadou Lamine; Diatta, Ibrahima; Sissoko, G.

doi:10.21474/ijar01/11695

Cited by 2 publications

(3 citation statements)

References 24 publications

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“…• by applying a magnetic field (B) [48], or irradiation by a flux (φp) of charged particles [61], temperature variation (T) [62] Journal of Electromagnetic Analysis and Applications…”

Section: Discussionmentioning

confidence: 99%

Diffusion Coefficient at Resonance Frequency as Applied to n+/p/p+ Silicon Solar Cell Optimum Base Thickness Determination

Ndiaye¹,

Gueye²,

Fall³

et al. 2020

JEMAA

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The modelling and determination of the geometric parameters of a solar cell are important data, which influence the evaluation of its performance under specific operating conditions, as well as its industrial development for a low cost. In this work, an n+/p/p+ crystalline silicon solar cell is studied under monochromatic illumination in modulation and placed in a constant magnetic field. The minority carriers' diffusion coefficient (D(ω, B), in the (p) base leads to maximum values (Dmax) at resonance frequencies (ωr). These values are used in expressions of AC minority carriers recombination velocity (Sb(Dmax, H)) in the rear of the base, to extract the optimum thickness while solar cell is subjected to these specific conditions. Optimum thickness modelling relationships, depending respectively on Dmax, ωr and B, are then established, and will be data for industrial development of low-cost solar cells for specific use.

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“…• by applying a magnetic field (B) [48], or irradiation by a flux (φp) of charged particles [61], temperature variation (T) [62] Journal of Electromagnetic Analysis and Applications…”

Section: Discussionmentioning

confidence: 99%

Diffusion Coefficient at Resonance Frequency as Applied to n+/p/p+ Silicon Solar Cell Optimum Base Thickness Determination

Ndiaye¹,

Gueye²,

Fall³

et al. 2020

JEMAA

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“…ii) For horizontal front illumination solar cell: The expressions of excess minority carriers' recombination velocity [26,27,36] are obtained as: iii) For vertical illumination solar cell: The vertical series junction gives the following recombination velocity [34,35,41] expressions: Nyquist diagrams [24][25][26][27] of the diffusion coefficient. As frequency increases, diffusion coefficient varies from constante value (steady state: ωτ <<1) to low value (dynamic regime: ωτ >>1).…”

Section: Composite Ac Back Surface Recombination Velocity Determinationmentioning

confidence: 99%

“…Then two frequency zones are observed on these curves and define our choice of study, as single and polycrystalline solar cells. [36][37][38][39] of graphical determination of the optimum base thickness (Hopt) of solar cells. Solar cells are, either horizontally illuminated by (n+), or vertically illuminated over all the different regions of the solar cell [40,41] .…”

Section: Composite Ac Back Surface Recombination Velocity Determinationmentioning

confidence: 99%

AC back surface recombination, as applied to determine (p) base thickness of both conventional and vertical series junction (n+/p/p+) silicon solar cells under white illumination

2023

JCBSC

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Both conventional and vertical series junction (n+/p/p+) silicon solar cells, illuminated with composite light (i.e white) in frequency modulation (ω), are studied from the dynamic diffusion equation, relative to the density of excess minority carriers in the (p) base. The expressions of minority carriers dynamic recombination velocity on the rear side of the base, are analyzed as a function of the dynamic diffusion coefficient (D(ω)), respectively to both structure, the single crystalline and the polycrystalline silicon solar cells under study. Thus, their graphic representation versus the thickness of the base (H) allows to extract the base optimum thickness (Hopt (ω)), for different frequency ranges values under white light modulation. The obtained base optimum thickness (Hopt (ω)) decreases with the frequency whatever the structure and suggests the realization of the solar cell with few (Si) raw materials. AC back surface … Matar NIANE et al.

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Ac Composite Back Surface Recombination Velocity as Applied to N+/P/P+ Silicon Solar Cell Optimum Thickness Base Determination

Cited by 2 publications

References 24 publications

Diffusion Coefficient at Resonance Frequency as Applied to n+/p/p+ Silicon Solar Cell Optimum Base Thickness Determination

Diffusion Coefficient at Resonance Frequency as Applied to n+/p/p+ Silicon Solar Cell Optimum Base Thickness Determination

AC back surface recombination, as applied to determine (p) base thickness of both conventional and vertical series junction (n+/p/p+) silicon solar cells under white illumination

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