2000
DOI: 10.1016/s0042-207x(00)00403-6
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AC conductivity and dielectric properties of Sb2S3 films

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Cited by 66 publications
(29 citation statements)
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“…It has an orthorhombic layered structure. 10,11 The values of the electronic gap of amorphous and crystalline Sb 2 S 3 thin films are 2.20 eV and 1.78 eV, respectively. 12,13 Due to the direct band gap and excellent photoconductivity of Sb 2 S 3 , it can be widely exploited in television cameras, microwave devices, and other optoelectronic devices.…”
Section: Introductionmentioning
confidence: 99%
“…It has an orthorhombic layered structure. 10,11 The values of the electronic gap of amorphous and crystalline Sb 2 S 3 thin films are 2.20 eV and 1.78 eV, respectively. 12,13 Due to the direct band gap and excellent photoconductivity of Sb 2 S 3 , it can be widely exploited in television cameras, microwave devices, and other optoelectronic devices.…”
Section: Introductionmentioning
confidence: 99%
“…Because of these useful properties, considerable efforts have been devoted to the fabrication of Sb 2 S 3 films and controlled synthesis of 1D Sb 2 S 3 nanostructures, as well as more complex assemblies. Various Sb 2 S 3 films have been fabricated by different methods, such as chemical bath deposition, [24] thermal evaporation, [25] and spray pyrolysis techniques. [26] .…”
Section: Introductionmentioning
confidence: 99%
“…In small polaron tunneling model frequency exponent s increases with temperature. In the correlated barrier hopping (CBH) model, s decreases with increasing temperature [39,40]. The observed trend of variation in s in the present investigated samples suggests that the CBH model is suitable for explaining the conduction mechanism of charge carriers in SDS doped PEDOT nanofibers system.…”
Section: Ac Conductivity Studymentioning
confidence: 65%