Ac conductivity of Ag-doped bulk, glassy As2S3

Sherrell, P. L.; Thompson, James C.

doi:10.1016/0022-3093(77)90062-x

Cited by 9 publications

(3 citation statements)

References 18 publications

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“…Raman studies suggested the formation of homogeneous Ag-As phase after the photo-dissolution of Ag in As-S. Many investigators [4][5][6][7][8][9][10][11][12][13][14] have tried to explain the mechanism of silver doping and the structure of chalcogenide glasses, but the basic understanding is still incomplete. Although most of the reported work on dissolution of Ag in chalcogenide semiconductors is with thin films [8,9], but few investigators have reported this phenomenon on bulk glasses as well [8,10,[12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Effect of silver doping on the electrical properties of a-Sb2Se3

Gautam

Thakur

Tripathi

et al. 2007

Journal of Non-Crystalline Solids

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This paper reports the effect of Ag-doping on electrical properties of a-Sb 2 Se 3 in the temperature range 230-340 K and frequency range 5-100 kHz. The variation of transport properties with thermal doping has been studied. Ag-doping produces two homogeneous phases in the sample, which are found to be voltage dependent in the temperature range studied and frequency dependent in lower frequency region (0.1-10 kHz). Activation energy E g and C 0 [= r 0 exp (c/k), where c, is the temperature coefficient of the band gap] calculated from dc conductivity has been found to vary from (0.42 ± 0.01) eV to (0.26 ± 0.01) eV and (4.11 ± 0.01) · 10 À5 to (2.90 ± 0.02) · 10 À6 X À1 cm À1 respectively. Ag-doping can be used to make the sample useful in device applications.

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Section: Introductionmentioning

confidence: 99%

Effect of silver doping on the electrical properties of a-Sb2Se3

Gautam

Thakur

Tripathi

et al. 2007

Journal of Non-Crystalline Solids

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“…CT increases by a factor of 50 a t this pressure. The addition of T1 and Si to As,Te, does not show such an essential influence on the pressure coefficient of conductivity as, for example, the addition of Ag to amorphous As,Se, and As,S, which changes a positive pressure coefficient of conductivity to the negative one [6]. Si does not change the character of the pressure dependence of the conductivity of As,Te, glasses.…”

Section: Conductivity a Due To Cawiers Excited To Extended Statesmentioning

confidence: 95%

The Effect of Pressure on Conductivity and Permittivity of As2Te3-Based Glasses

Krištofik¹,

Mareš²,

Šmíd³

1985

phys. stat. sol. (a)

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based glasses the conductivity 0, due t o carriers excited to extended states near the mobility edge, strongly increases with increasing pressure. I n As,Te, 0 measured a t room temperature rises by a factor of = 50 a t a pressure of 1 GPa. I n contrast to u, the low-temperatdre frequency-dependent hopping conductivity up is nearly pressure independent. The change of u with pressure is a result of pressure-induced decrease in the mobility gap. The pressure independence of uF is discussed with respect to Elliott's theory for ac conductivity. The permittivity in these glasses increases by less than 25% at 1 GPa. The pressure increase in permittivity is given by a positive change of the electronic contribution and a smaller negative change of the atomic contribution to the static permittivity.Dans les semiconducteurs vitreux As,Te,Si, et As,Te,Tl, (oh x = 0; 0,3; 0,6 et l), la conductiviti: blectrique u, due aux porteurs excites aux btats &tendus prAs du bord de mobilitb, croit rapidement avec la pression. Par example, dans As,Te, u mesuree It la tempkrature ambiante augmente = 50-fois h, la pression de 1 GPa. A la diffbrence de u, la conductiviti: dkpendente de la frkquence UF est presque indkpendante de la pression. La variation de (T avec la pression est attribuek It la diminution de la bande interdite SOUS la pression. Une variation faible de oF avec la pression est discutke par rapport It la th6orie de la conduction par saut par Elliott. La permittivitk des verres btudiks augmente par moins de 25% It 1 GPa. L'accroissement de la permittivitb sous la pression est dii it une variation positive de la contribution electronique et ti une variation negative plus lente de la contribution atomique la permittivitb.

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“…Other chalcogenide alloys for which A.C. measurements are available are As-Sb-S alloys [51], Ge-Se alloys [14,15,18,52]; and Ge-Sb-Se alloys [53]. Chalcogenide glasses doped with impurities have also received attention, AS2S3: Ag [22,54], AS2S3:In [55], AS2Se3:Ag [22,56] and Ge-S:Ag,Cu [57]. In addition, the pressure dependence of A.C. conductivity has also been reported for AS2Se3 and As-Se-Te alloys [58], and for AS2Te3 and As-Te-Si and As-Te-Tl alloys [59].…”

Section: Experimental Data For Amorphous Chalcogenide Materialsmentioning

confidence: 99%

A. C. Conduction in Chalcogenide Glasses

Elliott

1986

Structure and Bonding in Noncrystalline Solids

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Ac conductivity of Ag-doped bulk, glassy As2S3

Cited by 9 publications

References 18 publications

Effect of silver doping on the electrical properties of a-Sb2Se3

Effect of silver doping on the electrical properties of a-Sb2Se3

The Effect of Pressure on Conductivity and Permittivity of As2Te3-Based Glasses

A. C. Conduction in Chalcogenide Glasses

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