AC Electrical Conduction of Cr-Doped SrTiO3 Thin Films

Phan, Bach Thang; Lee, Jaichan; Kim, Nam-Chul

doi:10.3938/jkps.54.873

Cited by 10 publications

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“…[19][20][21][22] We have focused on correlation of the switching behavior of oxide films (SrTiO 3 , ZnO, TiO 2 , WO 3 and CrO x ) with crystallinity and electrode material. [5][6][7][8][14][15][16][17] From the perspective of application, the basic requirement for next-generation non-volatile memory is high scalability. Because it has recently been shown that switchable conducting nano-filaments may have potential for realizing high-density devices, filamentary switching in nanoscale devices has attracted much attention.…”

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confidence: 99%

Study of the Resistive Switching Effect in Chromium Oxide Thin Films by Use of Conductive Atomic Force Microscopy

Pham

Choi

Tran

et al. 2015

Journal of Elec Materi

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Reversible resistive switching of Cr 2 O 3 films was studied by use of conductive atomic force microscopy. Resistive switching in Cr 2 O 3 films occurs as a result of Ag filament paths formed during electrochemical redox reactions. A large memory density of 100 Tbit/sq. inch was achieved with a small filament diameter of 2.9 nm under the action of a compliance current of 10 nA. A fast switching speed of 10 ns, high scalability, and low set/reset currents suggest that Cr 2 O 3 -based resistive memory is suitable for nanoscale devices.Recent research has shown that resistance switching random access memory (ReRAM) is a promising candidate for nanoscale nonvolatile memory applications. Oxide-based ReRAM structures exploit the functionality of capacitor structures in which the oxide materials, for example perovskite (Cr-doped SrTiO 3 , Cr-doped SrZrO 3 , Pr 0.7 Ca 0.3 MnO 3 , etc.), 1-8 chalcogenide materials (GeSbTe), 9 transition metal oxides (TMOs), or binary oxides (NiO, TiO 2 , CuO x , HfO 2 , ZrO x , ZnO, Nb 2 O 5 , Al 2 O 3 , WO x , CrO x ) 10-18 are sandwiched between two metal electrodes. Choosing a material compatible with CMOS processes is a crucial challenge in current research on ReRAM. Among the different materials used, TMOs have the major advantages of simple fabrication and compatibility with CMOS processes. [19][20][21][22] We have focused on correlation of the switching behavior of oxide films (SrTiO 3 , ZnO, TiO 2 , WO 3 and CrO x ) with crystallinity and electrode material. [5][6][7][8][14][15][16][17] From the perspective of application, the basic requirement for next-generation non-volatile memory is high scalability. Because it has recently been shown that switchable conducting nano-filaments may have potential for realizing high-density devices, filamentary switching in nanoscale devices has attracted much attention. 20-23 Further physical insights into geometrical aspects of conducting filaments, for example their number, size, and location, can be obtained by use of conductive atomic force microscopy (C-AFM). Recently, we reported the switching behavior of CrO x thin films, and that the mechanism of switching was an electrochemical redox reaction. 17 To complement previous work, in this paper we report the progressive appearance of conducting filaments in CrO x thin films during resistance switching, studied by use of C-AFM.Silver and chromium oxide films were fabricated, by use of the DC sputtering technique at room temperature, from metallic Ag and Cr targets, on commercial Pt substrates. Deposition of 100-nmthick chromium oxides was performed in a gaseous mixture of 6% oxygen in argon with the total pressure kept at 7 9 10 À3 Torr. During deposition of the Ag top electrode, in an argon environment at 7 9 10 À3 Torr, a mask was used for top electrode patterning. X-ray photoelectron spectroscopy (XPS) was used to investigate the chemical state of the films. Current-voltage (I-V) measurements were obtained by use of a semiconductor-characterization system (Keithley 4200 SCS) and probe stati...

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confidence: 99%

Study of the Resistive Switching Effect in Chromium Oxide Thin Films by Use of Conductive Atomic Force Microscopy

Pham

Choi

Tran

et al. 2015

Journal of Elec Materi

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Resistance switching behavior of ZnO thin films for random access memory applications

Nguyen

Dao²,

Pham

et al. 2013

Sci. Tech. Dev. J.

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We investigated resistance switching behavior of the Ag/ZnO/Ti structures for random access memory devices. These films were prepared on glass substrate by dc sputtering technique at room temperature. The resistance switching follows unipolar switching mode with small switching voltages (0.4 V – 0.6 V). Our results figured out that the Ag/ZnO/Ti/Glass structure is a candidate structure for nonvolatile data storage applications.

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“…Based on the filamentary model, the switching mechanism was also interpreted. We have already published our research on the resistance switching effect in Pt / Cr-doped SrTiO3 / La0.5Sr0.5CoO3structure [5][6][7][8][9]. Currently,we are investigating the resistance switching of binary oxides.…”

Section: Introductionmentioning

confidence: 99%

“…The resistance switching was observed from various materials, such as perovskite oxides (Pr0.7Ca0.3MnO3, La0.7Ca0.3MnO3, Cr-dopedSrZrO3, Cr-dopedSrTiO3…) [1][2][3][4][5][6][7][8][9], transition metal oxides (NiO, Ti, CuO, ZrO2,ZnO…)… [10][11][12] We have already published our research on the resistance switching effect in Pt / Cr-doped SrTiO3 / La0.5Sr0.5CoO3structure [5][6][7][8][9].…”

Section: ⅰ Introductionmentioning

confidence: 99%

“…Resistance random access memory (ReRAM) has attracted extensive attention for their applications to nonvolatile data storage technologies due to its simple structure, low power consumption, low cost, nonvolality and high speed performance [1][2][3][4][5][6][7][8][9][10][11][12]. The resistance switching was observed from various materials, such as perovskite oxides (Pr0.7Ca0.3MnO3, La0.7Ca0.3MnO3, Cr-dopedSrZrO3, Cr-dopedSrTiO3…) [1][2][3][4][5][6][7][8][9], transition metal oxides (NiO, Ti, CuO, ZrO2,ZnO…)… [10][11][12] We have already published our research on the resistance switching effect in Pt / Cr-doped SrTiO3 / La0.5Sr0.5CoO3structure [5][6][7][8][9].…”

Section: ⅰ Introductionmentioning

confidence: 99%

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Electrical Conduction and Resistance Switching Mechanisms of Ag/ZnO/Ti Structure

Nguyen¹,

Pham²,

Trần³

et al. 2013

Journal of IKEEE

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We investigated electrical conduction and resistance switching behavior of the Ag/ZnO/Ti structures for random access memory devices. These films were prepared on glass substrate by dc sputtering technique at room temperature. The resistance switching follows unipolar switching mode with small switching voltages (0.4 V -0.6 V). Two electrical conduction mechanisms dominating the LRS and HRS are Ohmic and trap-controlled space charge limited current, respectively. These both conductions are consistent with the filamentary model. Based on the filamentary model, the switching mechanism was also interpreted. We have already published our research on the resistance switching effect in Pt / Cr-doped SrTiO3 / La0.5Sr0.5CoO3structure [5][6][7][8][9]. Currently,we are investigating the resistance switching of binary oxides. In this study, we reported the electrical conduction and the resistance switching behavior of the Ag/ZnO/Ti structure. Ⅱ. EXPERIMENTS AND DISCUSSIONThe Ag/ZnO/Ti structure, as shown in Figure 1, was fabricated by sputtering technique at room temperature, ZnO thin film was sandwiched between

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AC Electrical Conduction of Cr-Doped SrTiO3 Thin Films

Cited by 10 publications

References 0 publications

Study of the Resistive Switching Effect in Chromium Oxide Thin Films by Use of Conductive Atomic Force Microscopy

Study of the Resistive Switching Effect in Chromium Oxide Thin Films by Use of Conductive Atomic Force Microscopy

Resistance switching behavior of ZnO thin films for random access memory applications

Electrical Conduction and Resistance Switching Mechanisms of Ag/ZnO/Ti Structure

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