Accelerated Electromigration Study of Cobalt Thin Films by In-Situ TEM

Cobalt is a potential replacement for the copper in highly-scaled local interconnects [1]. Although cobalt has a higher bulk resistivity than copper, its carrier mean-free path is shorter, making it less resistive (and thus more resistant to electromigration (EM) failure) in nanoscale interconnects [2]. Studying EM failure in nanoscale interconnects is challenging, since few techniques can precisely measure EM-induced changes in thickness on the nanoscale [3]. In addition, EM is strongly temperature-dependent, but measuring temperature with nanoscale spatial resolution is difficult. Changes in temperature from Joule heating can be simulated, but this approach is subject to inaccuracies due to the significant uncertainty in the thermal conductivities of thin-film cobalt and thin-film silicon nitride. We use in situ STEM electron energy loss spectroscopy (EELS) to simultaneously measure temperature and mass transport within cobalt nanowires with nanoscale spatial resolution.

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Correlation of Joule Heating and Electromigration-induced Mass Transport within Nanoscale Co Interconnects by In Situ STEM

Zutter

Mecklenburg

Chan

et al. 2020

Microsc Microanal

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Accelerated Electromigration Study of Cobalt Thin Films by In-Situ TEM

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Correlation of Joule Heating and Electromigration-induced Mass Transport within Nanoscale Co Interconnects by In Situ STEM

Correlation of Joule Heating and Electromigration-induced Mass Transport within Nanoscale Co Interconnects by In Situ STEM

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