Accelerated temperature and humidity testing of 2D SnS<sub>2</sub> thin films made via four-inch-wafer-scale atomic layer deposition

Lee, Namgue; Choi, Hyun-Woong; Park, Hyun-Woo; Choi, Yeonsik; Yuk, Hyunwoo; Lee, Jung Hoon; Lee, Sung-Gwon; Lee, Eun Jong; Jeon, Hyeongtag

doi:10.1088/1361-6528/ab92cc

Cited by 5 publications

(2 citation statements)

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“…For the ALD deposition of sulfides such as CuS x , SnS x and ZnS, metalorganic precursors are typically used. The most common examples are copper 1,3-diketonates as Cu source [36][37][38][39][40][41][42][43][44], and tin amidates as Sn source [32,[45][46][47][48][49][50][51][52]. It has to be emphasized that the Sn ALD precursors for the synthesis of tin(IV) sulfides are particularly limited to tin amidates [32,[45][46][47][48][49][50][51][52], aminoalkoxy complexes [53] and the tin(IV) acetate [54][55][56].…”

Section: Introductionmentioning

confidence: 99%

The atomic layer deposition (ALD) synthesis of copper-tin sulfide thin films using low-cost precursors

Witkowski¹,

Starowicz²,

Ziȩba³

et al. 2022

Nanotechnology

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In this work we demonstrated the process of co-deposition of copper-tin sulfide species by the Atomic Layer Deposition (ALD) technique using all-low-cost precursors. For the deposition of tin species, the tin(IV) chloride SnCl4 was used successfully for the first time in the ALD process. Moreover, we showed that the successful deposition of the tin sulfide component was conditioned by the pre-deposition of CuSx layer. The co-deposition of copper and tin sulfides components at 150C resulted in the in-process formation of the film containing Cu2SnS3, Cu3SnS4 and π-SnS phases. The process involving only tin precursor and H2S did not produce the SnSx species. The spectroscopic characteristic of the obtained materials were confronted with the literature survey, allowing us to discuss the methodology of the determination of ternary and quaternary sulfides purity by Raman spectroscopy. Moreover, the material characterisation with respect to the morphology (SEM), phase composition (XRD), surface chemical states (XPS), optical properties (UV-vis-NIR spectroscopy) and electric (Hall measurements) properties were provided. Finally, the obtained material was used for the formation of the p-n junction revealing the rectifying I-V characteristics.

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Section: Introductionmentioning

confidence: 99%

The atomic layer deposition (ALD) synthesis of copper-tin sulfide thin films using low-cost precursors

Witkowski¹,

Starowicz²,

Ziȩba³

et al. 2022

Nanotechnology

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“…6 2D SnS 2 has been obtained by various methods such as mechanical exfoliation, 12 hydrothermal solution growth, 13 chemical vapor transport (CVT), 14 chemical vapor deposition (CVD), 15 and atomic layer deposition (ALD). 16,17 In early study of 2D SnS 2 , mechanical exfoliation and hydrothermal solution growth were widely used because they can produce high-quality 2D SnS 2 flakes. However, they grossly limited mass-production of wafer-scale 2D SnS 2 and were used exclusively for academic research.…”

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confidence: 99%

Role of an Al₂O₃ Passivation Layer during Annealing of 2D-SnS₂ Thin Films Grown by Atomic Layer Deposition

Lee¹,

Jeon²

2021

ECS J. Solid State Sci. Technol.

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Tin disulfide (SnS2) is a two-dimensional (2D) post-transition metal chalcogenide (p-TMDC) with considerable potential to compete with other benchmarked 2D-TMDC materials such as MoS2 and WS2. Compared with other 2D-TMDC materials, SnS2 has the strong advantage of being synthesized at low temperature. However, a lower synthetic temperature of SnS2 lessens its thermal stability at high temperature. Thus, many researchers have cautiously handled SnS2 when exposing it to high process temperature. In this paper, 2D SnS2 thin films with and without an Al2O3 passivation layer were prepared by atomic layer deposition (ALD), and post-annealing was performed under a H2S environment at various temperatures. SnS2 thin film with an Al2O3 passivation layer is more thermally stable at higher temperature during post-annealing than is SnS2 thin film without an Al2O3 passivation layer. Furthermore, higher temperatures used during post-annealing facilitate enhanced crystallinity of 2D SnS2 thin films without evaporation. The enhanced crystallinity is mainly attributed to the presence of an Al2O3 passivation layer that blocks evaporation of SnS2 and enables increased processing temperature in post-annealing.

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Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Mattinen

Leskelä

Ritala

2021

Adv Materials Inter

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it was soon replaced by other materials. Research on the fundamental properties and preparation of TMDC monolayers in solution (1986), [8] on single-crystal substrates in ultrahigh vacuum (2001), [9] and in an accessible way using mechanical exfoliation [10] (2005) followed. It was the discovery of graphene in 2004 [11] with its ever expanding list of unique and exciting properties, phenomena, and potential applications [12] that amassed broad attention to 2D materials and resulted in the 2010 Nobel Prize in Physics awarded to Andre Geim and Konstantin Novoselov. Tremendous efforts have been put toward synthesis and applications of graphene, including the billion euro Graphene Flagship project funded by the European Union. [13,14] Graphene is a semimetal, however, and the need to have semiconducting materials for many crucial applications, in particular in electronics, has led researchers to search for other 2D materials. The scientific community turned to TMDCs following breakthroughs in observation of unique thickness-dependent properties, [15,16] monolayer synthesis using chemical vapor deposition (CVD), [17,18] and demonstration of high-performance semiconductor devices [19-21] in 2010-2013 (Figure 1). Indeed, in 2013 the number of scientific publications on TMDCs, in particular MoS 2 , nearly tripled over 2012, and the strong growth has continued to date, fueled by advances in synthesis, new devices, and exciting physical phenomena. The explosive growth in MoS 2 research has also expanded to other TMDCs, [22] resulting in yet new phenomena and potential applications being found. [23-26] It is now clear that TMDCs are remarkable in many ways. Their layered crystal structure gives rise to fundamental physics not seen in 3D materials, which enables novel devices and applications. [25,26,32,34-36] The layered structure also gives TMDCs their highly anisotropic properties, extremely high specific surface areas, possibility to intercalate different species between the layers, and stability as ultrathin sheets down to three atomic layers thick. The TMDC family contains dozens of different materials from semiconductors to semimetals, metals, and even superconductors. [5,22,25,34] However, TMDC research is still mostly in the early discovery stages and the investigations of TMDCs largely continue using flakes produced by mechanical exfoliation of bulk crystals. [10,26] Unfortunately, this method cannot be scaled up for practical 2D transition metal dichalcogenides (TMDCs) are among the most exciting materials of today. Their layered crystal structures result in unique and useful electronic, optical, catalytic, and quantum properties. To realize the technological potential of TMDCs, methods depositing uniform films of controlled thickness at low temperatures in a highly controllable, scalable, and repeatable manner are needed. Atomic layer deposition (ALD) is a chemical gas-phase thin film deposition method capable of meeting these challenges. In this review, the applications evaluated for ALD TMDCs are systematically...

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Accelerated temperature and humidity testing of 2D SnS₂ thin films made via four-inch-wafer-scale atomic layer deposition

Cited by 5 publications

References 52 publications

The atomic layer deposition (ALD) synthesis of copper-tin sulfide thin films using low-cost precursors

The atomic layer deposition (ALD) synthesis of copper-tin sulfide thin films using low-cost precursors

Role of an Al₂O₃ Passivation Layer during Annealing of 2D-SnS₂ Thin Films Grown by Atomic Layer Deposition

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

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Accelerated temperature and humidity testing of 2D SnS2 thin films made via four-inch-wafer-scale atomic layer deposition

Cited by 5 publications

References 52 publications

The atomic layer deposition (ALD) synthesis of copper-tin sulfide thin films using low-cost precursors

The atomic layer deposition (ALD) synthesis of copper-tin sulfide thin films using low-cost precursors

Role of an Al2O3 Passivation Layer during Annealing of 2D-SnS2 Thin Films Grown by Atomic Layer Deposition

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

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Accelerated temperature and humidity testing of 2D SnS₂ thin films made via four-inch-wafer-scale atomic layer deposition

Role of an Al₂O₃ Passivation Layer during Annealing of 2D-SnS₂ Thin Films Grown by Atomic Layer Deposition