2019
DOI: 10.1002/smll.201804613
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Accelerating Photogenerated Charge Kinetics via the Synergetic Utilization of 2D Semiconducting Structural Advantages and Noble‐Metal‐Free Schottky Junction Effect

Abstract: holes and the reduction reaction from the photogenerated electrons. The redox capability of the semiconductor is determined by the band structure. The more positive valence band (VB) and more negative conduction band (CB) edges mean the stronger redox capability for the semiconductor, indicating that the wide-bandgap semiconductor possesses the stronger redox capability. [5] However, the wide-bandgap semiconductor can only be excited by the ultraviolet light, which counts against the utilization of solar energ… Show more

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Cited by 59 publications
(32 citation statements)
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“…[ 89 ] Different from the ordinary typeII heterojunction photocatalysts, all‐solid‐state g‐C 3 N 4 ‐based Z‐scheme heterojunction has a particular interfacial charge gradient mechanism. [ 41,90,91 ] As shown in Figure 4c, the photogenerated electrons generated in carbon nanostructures are directly injected from the LUMO of carbon to g‐C 3 N 4 , recombination with photogenerated holes in the HOMO of g‐C 3 N 4 . The more positive VB potential of g‐C 3 N 4 nanostructures and negative CB potential of carbon over Z‐scheme heterojunction mitigates bandwidth broaden with a more suitable chemical potential for half‐reactions (governing the lowered overpotential for reduction half reaction and increased for oxidation half reaction).…”
Section: Carbon‐induced Enhancement Mechanism In Photocatalytic Actionmentioning
confidence: 99%
See 1 more Smart Citation
“…[ 89 ] Different from the ordinary typeII heterojunction photocatalysts, all‐solid‐state g‐C 3 N 4 ‐based Z‐scheme heterojunction has a particular interfacial charge gradient mechanism. [ 41,90,91 ] As shown in Figure 4c, the photogenerated electrons generated in carbon nanostructures are directly injected from the LUMO of carbon to g‐C 3 N 4 , recombination with photogenerated holes in the HOMO of g‐C 3 N 4 . The more positive VB potential of g‐C 3 N 4 nanostructures and negative CB potential of carbon over Z‐scheme heterojunction mitigates bandwidth broaden with a more suitable chemical potential for half‐reactions (governing the lowered overpotential for reduction half reaction and increased for oxidation half reaction).…”
Section: Carbon‐induced Enhancement Mechanism In Photocatalytic Actionmentioning
confidence: 99%
“…Accordingly, the knowledge‐based modification of carbon‐induced g‐C 3 N 4 photocatalysts that can positively facilitate photocatalytic reaction have been achieved through the junction interaction, [ 41,42 ] cocatalyst effect, [ 43,44 ] surface reconstruction, [ 45,46 ] local electric modification, [ 47 ] and so on. Using a well‐defined carbon framework as significantly layer‐protected conductor, for instance, Zheng et al.…”
Section: Introductionmentioning
confidence: 99%
“…As shown in Figure 3B, the metal can capture the photogenerated electrons from the n‐type semiconductor for reduction reaction, and the trapped electrons cannot flow back to the n‐type semiconductor due to the Schottky potential well (ϕ SB ). For p‐type semiconductor with less W C than W S , the Schottky effect can similarly improve the separation of photoproduced electron and hole via trapping the holes [39] …”
Section: Exceptional Functions Of Metals In Hybrid Photocatalystsmentioning
confidence: 99%
“…Therefore, cocatalysts play an important role in improving the performance of photocatalytic H2 evolution. Until now, a large number of strategies were developed to modify semiconductor photocatalysts by cocatalysts, such as Type I heterojunction [69,70], Type II heterojunction [61], p-n heterojunction [62,71,72], Schottky-junction [73,74], Z-scheme heterojunction [75][76][77][78] and S-scheme heterojunction [14], which have been widely designed to form build-in electric field for boosting the charge carrier separation, thus achieving improved photocatalytic hydrogen production.…”
Section: Introductionmentioning
confidence: 99%