1997
DOI: 10.4028/www.scientific.net/msf.258-263.1223
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Acceptor-Hydrogen Interaction in InAs

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Cited by 4 publications
(11 citation statements)
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“…Passivation of the Cd dopant by the formation of Cd-H pairs is known in indium arsenide. 79 However, As-H is a much stronger bond (582 kJ mol -1 ) than any of Hg-H, Cd-H or Te-H and on prolonged annealing such as the 4 h anneals described earlier, the hydrogen bonded to the matrix elements is likely to move to and bond with As to form As-H, i.e., internal passivation. This is supported by comparison of Figs.…”
Section: Discussionmentioning
confidence: 97%
“…Passivation of the Cd dopant by the formation of Cd-H pairs is known in indium arsenide. 79 However, As-H is a much stronger bond (582 kJ mol -1 ) than any of Hg-H, Cd-H or Te-H and on prolonged annealing such as the 4 h anneals described earlier, the hydrogen bonded to the matrix elements is likely to move to and bond with As to form As-H, i.e., internal passivation. This is supported by comparison of Figs.…”
Section: Discussionmentioning
confidence: 97%
“…111m Cd, T 1/2 = 48 min; 77 Kr, T 1/2 = 74 min; 117 Cd, T 1/2 = 2.5 h) and EC (e.g. 24 Na, T 1/2 = 15 h, 107 Cd, T 1/2 = 6.5 h). • Half-lives of less than some 10 min require so-called on-line experiments.…”
Section: Radioactive Probe Atomsmentioning
confidence: 99%
“…Since the late 1980s many PAC experiments have been carried out on hydrogen in Si [183][184][185] and III-V semiconductors [119,120,122,[186][187][188][189][190][191][192] and a considerable amount of new information could be obtained concerning formation, microscopic structure and stability of acceptor hydrogen complexes. PAC studies on acceptor-hydrogen interactions require a doping of the material with probe atoms, which represent acceptor impurities in the corresponding semiconductor.…”
Section: Hydrogen Passivation In Semiconductorsmentioning
confidence: 99%
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“…Detailed experiments in InAs (Forkel-Wirth et al . 1994, 1995Burchard et al . 1997c) demonstrate that f 2 (H), f 2 (H) * break up at room temperature and the corresponding dissociation energy is E d = 1.0(1) eV.…”
Section: (A) Hydrogen Passivation In Iii-v Semiconductorsmentioning
confidence: 99%