2016 IEEE International Electron Devices Meeting (IEDM) 2016
DOI: 10.1109/iedm.2016.7838518
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Acceptor-like trap effect on negative-bias temperature instability (NBTI) of SiGe pMOSFETs on SRB

Guangfan Jiao
1
,
M. Toledano-Luque
2
,
Kab-Jin Nam
3
et al.
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