Acceptor states in CdTe and comparison with ZnTe. General trends

Molva, E.; Pautrat, J.L.; Saminadayar, K.; Milchberg, G.; Magnéa, N.

doi:10.1103/physrevb.30.3344

Cited by 225 publications

(82 citation statements)

References 31 publications

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“…This value is close to the acceptor energy of Li or Na (58.0 meV and 58.7 meV, respectively) [44]. The energy of the both exciton acceptor complexes is about 1.589 eV [44]. This indicates that A°X-line is complex and consists of the overlaping emission of several exciton acceptor complexes.…”

Section: Photoluminescence Of CD 1 à X Zn X Te Filmsmentioning

confidence: 63%

“…Therefore, it is expected that the energy of acceptor center is about 117 meV. It should be noted that this energy is close to the energy of Ag acceptor center (107 meV) [44]. At the same time the acceptor energy is almost coincides with the energy of an A center where a Cd vacancy paired with a Cl donor, namely, (V Cd -Cl Te ) acceptor center (120 meV) [48,49].…”

Section: Photoluminescence Of CD 1 à X Zn X Te Filmsmentioning

confidence: 88%

“…(1) we obtain the energy of the acceptor center associated with (e,A)-transition, namely E A ¼59 meV. This value is close to the acceptor energy of Li or Na (58.0 meV and 58.7 meV, respectively) [44]. The energy of the both exciton acceptor complexes is about 1.589 eV [44].…”

Section: Photoluminescence Of CD 1 à X Zn X Te Filmsmentioning

confidence: 99%

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Photoluminescence of CdZnTe thick films obtained by close-spaced vacuum sublimation

Kosyak

Znamenshchykov

Čerškus

et al. 2016

Journal of Luminescence

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a b s t r a c tPolycrystalline Cd 1 À x Zn x Te thick films with thicknesses of about 30 μm have been deposited on a Mo coated glass substrate by means of close-spaced vacuum sublimation technique. X-ray diffraction measurements have shown that the films obtained have only cubic zinc blende phase. The influence of Zn concentration on the photoluminescence (PL) spectra of Cd 1 À x Zn x Te films was investigated. This let us determine the nature and energy structure of the intrinsic defects and residual impurities in the films. The presence of the most intense acceptor bound exciton A°X-line for x ¼ 0.10 and the lines of localized excitons (x ¼ 0.32 À 0.44) in PL spectra of Cd 1 À x Zn x Te films indicates their fairly good optical quality as well as the p-type conductivity. There were also other intensive broad PL bands, caused by the recombination of donor-acceptor pairs involving complex acceptor centers, extended defects of dislocation type, and microstress in the films. It was also established a correlation between the broadening of exciton lines and the values of microstress in Cd 1 À x Zn x Te thick films. Taking into account the energy position of exciton lines, the concentration dependence of the band gap for the Cd 1 À x Zn x Te thick films is presented.

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Section: Photoluminescence Of CD 1 à X Zn X Te Filmsmentioning

confidence: 63%

Section: Photoluminescence Of CD 1 à X Zn X Te Filmsmentioning

confidence: 88%

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Photoluminescence of CdZnTe thick films obtained by close-spaced vacuum sublimation

Kosyak

Znamenshchykov

Čerškus

et al. 2016

Journal of Luminescence

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“…From the levels of Ag and Cu in the Au, and the fact that Na would have to diffuse from the glass, we consider the most likely acceptor to be Ag followed by Cu and then Na. Given the lack of near edge Au luminescence, we also looked for matches to other Au-related lines in this region, these being the series of three lines assigned to the neutral complex Au Cd -Au i by Molva [31], as shown in table 2, and having energies 1.57210, 1.53850 and 1.52668 eV. However, there is no match to the first (1.57210 eV), and we considered it unlikely that the second two (1.53850 and 1.52668 eV) were hidden under the lines at 1.539 and 1.529 eV for the following reasons: a) Molva reports that the three complex lines only appear alongside the Au 0 X line, which is missing here, and b) Molva reports that all three complex lines appear together, but the first is clearly missing from our spectra.…”

Section: Photoluminescence Of Isolated Nanowires (As-grown Samples)mentioning

confidence: 99%

Microstructure and point defects in CdTe nanowires for photovoltaic applications

Williams¹,

Halliday²,

Mendis³

et al. 2013

Nanotechnology

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Publisher's copyright statement:This is an author-created, un-copyedited version of an article accepted for publication in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/10.1088/0957-4484/24/13/135703Additional information: Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-pro t purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. AbstractDefects in Au-catalysed CdTe nanowires VLS-grown on polycrystalline underlayers have been critically evaluated. Their low-temperature photoluminescence spectra were dominated by excitonic emission with rarely observed above-gap emission also being recorded. While acceptor bound exciton lines due to monovalent metallic impurities (Ag, Cu or Na) were seen, only deeper, donor acceptor pair emission could be attributed to the Au contamination that is expected from the catalyst. Annealing under nitrogen acted to enhance the single crystal-like PL emission, whilst oxidising and reducing anneals of the type that are used in solar cell device processing caused it to degrade. The incidence of stacking faults, polytypes and twins was related only to the growth axes of the wires (<111> 50%, <112> 30% and <110> 20%), and was not influenced by annealing. The potential electrical activity of the point and extended defects, and the suitability of these nanowire materials (including processing steps) for solar cell applications, is discussed. Overall they have quality that is superior to that of thin polycrystalline films, although questions remain about recombination due to Au.

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“…The element Ag is an unintentional impurity in both ZnTe and CdTe, which is important for understanding the electrical and optical properties of these materials [2]. In the PL spectra of undoped ZnTe, lines corresponding to an acceptor level at 121 meV are observed: the principal bound exciton line (PBE) at 2.3740 eV ( A Ag 1 ), which is caused by the recombination of excitons bound to this acceptor, and the corresponding two hole transitions (THT) [3,4,5].…”

Section: Introductionmentioning

confidence: 99%

Identification of Ag-acceptors in 111Ag/111Cd doped ZnTe and CdTe

Hamann¹,

Burchard²,

Deicher³

et al. 2000

Journal of Crystal Growth

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Nominally undoped ZnTe and CdTe crystals were implanted with radioactive 111 Ag, which decays to 111 Cd, and investigated by photoluminescence spectroscopy (PL). In ZnTe, the PL lines caused by an acceptor level at 121 meV are observed: the principal bound exciton (PBE) line, the donor-acceptor pair (DAP) band, and the two-hole transition lines. In CdTe, the PBE line and the DAP band that correspond to an acceptor level at 108 meV appear. Since the intensities of all these PL lines decrease in good agreement with the half-life of 111 Ag of 178.8 h, both acceptor levels are concluded to be associated with defects containing a single Ag atom. Therefore, the earlier assignments to substitutional Ag on Zn-and Cd-lattice sites in the respective II-VI semiconductors are confirmed. The assignments in the literature of the S 1 , S 2 , and S 3 lines in ZnTe and the X Ag 1 , X Ag 2 / C Ag 1 , and C Ag 2 lines in CdTe to Ag-related defect complexes are not confirmed.(IS369)

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Acceptor states in CdTe and comparison with ZnTe. General trends

Cited by 225 publications

References 31 publications

Photoluminescence of CdZnTe thick films obtained by close-spaced vacuum sublimation

Photoluminescence of CdZnTe thick films obtained by close-spaced vacuum sublimation

Microstructure and point defects in CdTe nanowires for photovoltaic applications

Identification of Ag-acceptors in 111Ag/111Cd doped ZnTe and CdTe

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