2021
DOI: 10.1021/acs.chemmater.1c03671
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Accessing High-Power Near-Infrared Spectroscopy Using Cr3+-Substituted Metal Phosphate Phosphors

Abstract: Near-infrared (NIR) phosphor-converted light-emitting diode (pc-LED) technology has attracted considerable interest as a next-generation light source for emerging NIR spectroscopic applications. However, discovering efficient broadband NIR phosphors necessary to access the desired long-wavelength (λem ≥ 800 nm) energy window remains a challenge. Here, a new phosphate phosphor, KGaP2O7:Cr3+, emerged from a fundamental study of the AMP2O7 (A = Li, Na, K; M = Al, Ga, Sc, In) family. This material combines all of … Show more

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Cited by 70 publications
(68 citation statements)
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“…The IQE value is much higher than that of most broadband NIR materials, such as ScF 3 :Cr 3+ (IQE = 45%, λ em = 853 nm), La 2 MgZrO 6 :Cr 3+ (IQE = 58%, λ em = 825 nm), Ca 2 LuZr 2 Al 3 O 12 :Cr 3+ (IQE = 69.1%, λ em = 750 nm), KGaP 2 O 7 :Cr 3+ (IQE = 74.4%, λ em = 815 nm), and LaMgGa 11 O 19 :Cr 3+ (83.8%, λ em = 715 nm); and the AE value is the highest in Cr 3+ -activated garnet materials (Table ). ,, The ultrahigh IQE and AE of this material generate a high EQE of 42.7%, which is the highest among Cr 3+ activated garnet materials …”
Section: Resultsmentioning
confidence: 95%
See 1 more Smart Citation
“…The IQE value is much higher than that of most broadband NIR materials, such as ScF 3 :Cr 3+ (IQE = 45%, λ em = 853 nm), La 2 MgZrO 6 :Cr 3+ (IQE = 58%, λ em = 825 nm), Ca 2 LuZr 2 Al 3 O 12 :Cr 3+ (IQE = 69.1%, λ em = 750 nm), KGaP 2 O 7 :Cr 3+ (IQE = 74.4%, λ em = 815 nm), and LaMgGa 11 O 19 :Cr 3+ (83.8%, λ em = 715 nm); and the AE value is the highest in Cr 3+ -activated garnet materials (Table ). ,, The ultrahigh IQE and AE of this material generate a high EQE of 42.7%, which is the highest among Cr 3+ activated garnet materials …”
Section: Resultsmentioning
confidence: 95%
“…The FWHM of emission spectra broadens from 125 to 140 nm, ascribing to the increasing number of vibrational energy levels with increasing temper- ature. 60 It is notable that when the temperature heated up to 423 K, the integrated emission intensity maintains 100% of the initial intensity at 298 K (Figure 5b), demonstrating a rare zero-thermal quenching property of this material. Generally, zero-thermal quenching of phosphor is closely related to the release of electrons from defect-induced trap states at increased temperature.…”
Section: Crystal Structure and Morphologymentioning
confidence: 87%
“…12 In addition, their preferable excitation by blue light could perfectly fit the commercial blue LED chips. 13 Enormous case studies were performed in search of suitable host matrices for Cr 3+ . 14 Plenty of Cr 3+ -activated NIR emitters were researched, such as oxide-based Gd 3 Sc 2 Ga 3 O 12 :Cr 3+ , Lu 2 CaMg 2 Si 3 O 12 :Cr 3+ , ScBO 3 :Cr 3+ , LiScP 2 O 7 :Cr 3+ , and fluoride-based K 3 AlF 6 :Cr 3+ , K 3 GaF 6 :Cr 3+ .…”
Section: Introductionmentioning
confidence: 99%
“…To date, NIR emissions were realized in Eu 2+ -, Cr 3+ -, and/or Mn 2+ -doped systems. In particular, the Cr 3+ ones have shown broadband NIR emission originated from their unique d 3 electronic configuration when it situated in the weak crystal field environment . In addition, their preferable excitation by blue light could perfectly fit the commercial blue LED chips . Enormous case studies were performed in search of suitable host matrices for Cr 3+ .…”
Section: Introductionmentioning
confidence: 99%
“…19 KGaP 2 O 7 exhibits a broadband NIR emission peak at 815 nm when Cr 3+ is added in a weak crystal eld environment. 20 In addition, the garnetstructured Gd 3 Y 0.5 In 0.5 Ga 4 O 12 phosphor displayed a broadband NIR emission peak at 760 nm, and broadband emission at 650-1050 nm was achieved by adjusting the six-coordinated crystal eld environment occupied by Cr 3+ with an IQE of 81.8%. 21 Although these materials are suitable for the NIR region, they are not well suited to the application requirements.…”
Section: Introductionmentioning
confidence: 99%