2013
DOI: 10.1016/j.commatsci.2013.02.029
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Accounting oxygen vacancy for half-metallicity and magnetism in Fe-doped CeO2 dilute magnetic oxide

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Cited by 46 publications
(16 citation statements)
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“…18 Such study to develop new material with room temperature ferromagnetism along with the semiconducting properties is very useful to engineer and design new spintronics devices like magnetic sensors, spin light emitting diodes, spin valves and ultra-fast optical switches. 19 CeO 2 is a chemically stable oxide with capacity to store or release oxygen due to the variation of the oxidation state from Ce 4+ to Ce 3+ . The variation of the oxidation state, CeO 2 can form stable oxygen vacancies in the matrix.…”
Section: +mentioning
confidence: 99%
“…18 Such study to develop new material with room temperature ferromagnetism along with the semiconducting properties is very useful to engineer and design new spintronics devices like magnetic sensors, spin light emitting diodes, spin valves and ultra-fast optical switches. 19 CeO 2 is a chemically stable oxide with capacity to store or release oxygen due to the variation of the oxidation state from Ce 4+ to Ce 3+ . The variation of the oxidation state, CeO 2 can form stable oxygen vacancies in the matrix.…”
Section: +mentioning
confidence: 99%
“…Since the remarkable discovery of HM ferromagnetism in NiMnSb by de Groot et al [5], the research in this field has made a significant development. Today, despite the theoretical prediction of half-metallicity in Heusler alloys [6][7][8][9][10][11][12][13] and in other systems [14][15][16], this character has been very well confirmed experimentally also [17][18][19].…”
Section: Introductionmentioning
confidence: 81%
“…During the past decades, the half-metallic materials have attracted so much attention due to their great potential in the field of spintronics device application [1][2][3][4][5][6][7][8][9][10], such as tunnelling magnetoresistance (TMR) devices [11], magnetic tunnel junctions [12,13] and spin injection devices [14]. The concept of half-metallic property was initially proposed by De Groot et al basing on NiMnSb half-Heusler alloy calculations [15], which behaved as the metal for one spin direction and as the semiconductor or isolator for the opposite spin direction.…”
Section: Introductionmentioning
confidence: 99%