Accuracy-improved through-silicon-via model using conformal mapping technique

Abstract

In this paper, the effects of slow wave and dielectric quasi-TEM modes in through-silicon via (TSV) are analyzed by using the currently used TSV model. By the E-field plot, if pitchto-diameter ratio is small in TSV structure, it is found out that some electrical behaviour of the TSVs is not well characterized by conventional model. This paper proposes a general and analytic model for the electrical modeling of through-silicon via (TSV) based on the conformal mapping method to modify the conventional model in admittance (CG) parts. With the improved model, the electrical performance of the modified model agrees very well with full-wave simulation up to 40GHz for small normalized pitch TSV.

Coupling capacitance in through‐silicon vias: non‐homogeneous medium effect

“…Coupling capacitance error against frequency: Historically, many publications have been dedicated to predicting the silicon substrate behaviour against frequency. This has been related to TSVs in [6,7]. Silicon substrate is electrically modelled to have two natures: a 'conductor' nature and a 'dielectric' nature.…”