2019
DOI: 10.1109/jsen.2019.2921406
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Accuracy of CMOS-Based Piezoresistive Stress Sensor for Engineering Applications of Thermal Loading Condition: Theoretical Review and Experimental Validation

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Cited by 12 publications
(2 citation statements)
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“…One of the most important aspects in PHM is the sensor data selection, as it has to be sensitive to a damage of interest. A piezoresistive silicon-based stress sensor was employed in this study, due to its direct connection to any physical changes in the package [15]. The stresses are calculated based on the two measured quantities: (1) the stresses determined from pMOS and nMOS current values and (2) the temperature determined from the voltages.…”
Section: Methodsmentioning
confidence: 99%
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“…One of the most important aspects in PHM is the sensor data selection, as it has to be sensitive to a damage of interest. A piezoresistive silicon-based stress sensor was employed in this study, due to its direct connection to any physical changes in the package [15]. The stresses are calculated based on the two measured quantities: (1) the stresses determined from pMOS and nMOS current values and (2) the temperature determined from the voltages.…”
Section: Methodsmentioning
confidence: 99%
“…This data is then passed through a preprocessing step that removes outliers, smoothens the data and extracts the relative stresses caused by the temperature change. More details about the theoretical background of the stress sensor can be found in [16] and the fundamentals of how to use such sensor in reliability are described in detail in [15]. An acquisition unit (AU) is utilized to acquire the sensor signals, and the second unit is to process and transmit the data (PHM Central Unit).…”
Section: Methodsmentioning
confidence: 99%