Accuracy of Microwave Transistor $f_{\rm T}$ and $f_{\rm MAX}$ Extractions

Teppati, Valeria; Tirelli, Stefano; Lovblom, Rickard; Flückiger, Ralf; Alexandrova, Maria; Bolognesi, C.R.

doi:10.1109/ted.2014.2306573

Cited by 23 publications

(11 citation statements)

References 18 publications

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“…Here, the two most common one, corresponding to the unity gain frequencies of the maximum stable gain (MSG), and the unilateral gain (GTU) are used [15]. These parameters are calculated from the scattering parameters using the following equations [16]:…”

Section: B Unity Power Gain Frequencymentioning

confidence: 99%

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Flexible InGaZnO TFTs With ${f}$ $_{\textsf{max}}$ Above 300 MHz

Münzenrieder

Ishida

Meister

et al. 2018

IEEE Electron Device Lett.

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Abstract-In this letter, the AC performance and influence of bending on flexible IGZO thin-film transistors, exhibiting a maximum oscillation frequency (maximum power gain frequency) fmax beyond 300 MHz, are presented. Self-alignment was used to realize TFTs with channel length down to 0.5 µm. The layout of this TFTs was optimized for good AC performance. Besides the channel dimensions this includes ground-signal-ground contact pads. The AC performance of this short channel devices was evaluated by measuring their two port scattering parameters. These measurements were used to extract the unity gain power frequency from the maximum stable gain and the unilateral gain. The two complimentary definitions result in fmax values of (304 ± 12) MHz and (398 ± 53) MHz, respectively. Furthermore, the transistor performance is not significantly altered by mechanical strain. Here, fmax reduces by 3.6 % when a TFT is bent to a tensile radius of 3.5 mm.

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Section: B Unity Power Gain Frequencymentioning

confidence: 99%

“…Although this shifts are within the measurement uncertainty, a negative shift is expected. This is caused by the inverse dependency of f max on the gate capacitance [16], and the increase of the gate capacitance of these TFTs under tensile stress. Tensile strain of 0.7 % increases the measured C G by 1.1 % to 2.3 %.…”

Section: Bendingmentioning

confidence: 99%

Flexible InGaZnO TFTs With ${f}$ $_{\textsf{max}}$ Above 300 MHz

Münzenrieder

Ishida

Meister

et al. 2018

IEEE Electron Device Lett.

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“…In these cases, the ratio of voltage and current is obviously not affected by errors in the absolute calibration. Differently, the impedances at the current-generator plane are derived from (9), (10), (11), which include also a nonlinear transformation applied to the intrinsic voltages due the capacitance nonlinearity (9). This transformation makes the impedances at the currentgenerator plane sensitive also to errors in the absolute calibration.…”

Section: B Uncertainty Resultsmentioning

confidence: 99%

“…Much work has been devoted to the uncertainty evaluation in measurements at microwave and millimeter-wave frequencies, including [7]- [13]. In [7]- [11] uncertainty is evaluated in microwave small-signal measurements. In [12], [13] the study of uncertainty is carried out for load-pull measurements.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of Uncertainty in Temporal Waveforms of Microwave Transistors

Avolio

Raffo

Jargon

et al. 2015

IEEE Trans. Microwave Theory Techn.

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We evaluate the uncertainty in on-wafer vector-calibrated nonlinear measurements with the National Institute of Standards and Technology (NIST) Microwave Uncertainty Framework. We include in our analysis uncertainties in the passive calibration standards, power meter, NIST-traceable phase calibration reference, cable bending, and probe alignment. These uncertainties are propagated first to the electrical quantities across the terminals of the device-under-test, which was an on-wafer microwave transistor. Next, we propagate uncertainties to the transistor current-generator plane, whose temporal voltage/current waveforms and impedances are of interest for the design of power amplifiers

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“…This instrument measures electromagnetic scattering parameters (Sparameters), which completely define the response of a linear device. Through calibration processes systematic errors in VNA measurements can be significantly reduced, and there has been much study of the residual uncertainty that remains due to imperfect calibration and random errors [3]- [7]. The evaluation of this uncertainty is typically referenced to national measurement standards through a traceability chain [8], and there are guidelines available for evaluations which are compatible with industry requirements [9], [10].…”

Section: Introductionmentioning

confidence: 99%

Propagating Measurement Uncertainty to Microwave Amplifier Nonlinear Behavioral Models

Stant

Salter

Ridler

et al. 2019

IEEE Trans. Microwave Theory Techn.

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We propagate for the first time correlated measurement uncertainties into a nonlinear behavioral model of a millimeter-wave amplifier. We make use of the National Institute of Standards and Technology Microwave Uncertainty Framework to evaluate the uncertainties in large-signal electromagnetic wave measurements of an amplifier, followed by the extraction of Xparameters using an industry standard algorithm. This extracted model is included as a component in a circuit simulator to evaluate gain and efficiency incorporating measurement uncertainty.Index Terms-Measurement uncertainty, microwave amplifiers, microwave measurement, millimeter wave measurements, millimeter wave transistors, parameter extraction, power amplifiers.

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Accuracy of Microwave Transistor $f_{\rm T}$ and $f_{\rm MAX}$ Extractions

Cited by 23 publications

References 18 publications

Flexible InGaZnO TFTs With ${f}$ $_{\textsf{max}}$ Above 300 MHz

Flexible InGaZnO TFTs With ${f}$ $_{\textsf{max}}$ Above 300 MHz

Evaluation of Uncertainty in Temporal Waveforms of Microwave Transistors

Propagating Measurement Uncertainty to Microwave Amplifier Nonlinear Behavioral Models

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