Accuracy of new analytical models for resist formation lithography

Malov, Juriy; Kalus, Christian K.; Muellerke, Henning; Schmoeller, Thomas; Wildfeuer, Robert

doi:10.1117/12.474506

Cited by 3 publications

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“…A similar model was also published by another group [14]. These 3D-LPM models include defocus of the Image-in-Resist, Fickian diffusion, and solve for the generalized develop path to determine the final resist profile.…”

Section: Introductionmentioning

confidence: 88%

Lumped parameter model for chemically amplified resists

2004

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Recently the Lumped Parameter Model (LPM) has been extended to three dimensions enabling fast calculations of full resist profiles. This resist model incorporates most of the lithographically significant physical phenomenon of resist systems. This model works well to match isolated and semi-isolated line resist systems. However, it is not very successful at matching contact hole or isolated trench resist systems. The reason for this mismatch can be traced to the influence of base quencher present in chemically amplified (CA) resists yet absent from the original LPM. The quencher effectively splits the aerial image into two complementary images. These two images (acid and base) simultaneously diffuse and react with each other. A single aerial image diffusion model cannot approximate the resulting coupled quenching-diffusion system.An improved LPM that incorporates quencher and its diffusion is presented. Successful implementation of this model requires solving the coupled quenching-diffusion system in a fast and accurate manner. Several solution methods are discussed. The agreement between the Lumped Parameter Model and a full CA resist model is greatly improved. This improvement will enable fast and more accurate calculations of resist affects on threedimensional imaging bias.

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Section: Introductionmentioning

confidence: 88%

Lumped parameter model for chemically amplified resists

2004

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“…8 Several commercial technology computer aided design (TCAD) software packages were introduced to the industry through the 1990's, all enabling increasingly accurate simulation of relatively small layout windows. [9][10][11] These tools have been used for countless applications including design rule determination, antireflection layer optimization, mask defect printing assessment, and much more. These simulations are based upon models that mathematically represent the distinct steps in the patterning sequence: aerial image formation, exposure of photoresist, post-exposure bake (PEB), develop, and pattern transfer.…”

Section: Introductionmentioning

confidence: 99%

Challenges for patterning process models applied to large scale

Sturtevant

2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Full-chip patterning simulation has been utilized in semiconductor manufacturing for more than ten years, and has been a key enabler for multiple technology generations, from 130 nm to the emerging 14 nm node. This span has featured two wavelength changes, a progression of optical NA increases (and a subsequent decrease), and a variety of patterning processes and chemistries. Full-chip patterning simulations utilize quasirigorous optical models and semiempirical resist and etch process models. There has been steady improvement in the predictive power and computational efficiency of the patterning models used in full chip simulation tools, and this paper will review this progress as well as the factors that ultimately limit the predictive capability of such models. In addition, this paper will outline the new process simulation challenges that are emerging as the industry approaches sub-0.25 k1 patterning. These challenges lie principally in improving accuracy and predictive capability, including 3D effects, for an expanding set of processes and failure modes, while maintaining or improving full chip data preparation cycle times.

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Microphotonic systems utilizing SU-8

Rumpf

Johnson

2004

MOEMS and Miniaturized Systems IV

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Accuracy of new analytical models for resist formation lithography

Cited by 3 publications

References 0 publications

Lumped parameter model for chemically amplified resists

Lumped parameter model for chemically amplified resists

Challenges for patterning process models applied to large scale

Microphotonic systems utilizing SU-8

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