Accuracy of the non-destructive surface nanostructure quantification technique based on analysis of the XPS or AES peak shape

Coating of zinc ferrite particles with a conducting polymer, polyaniline

“…The method relies on the fact that the energy distribution of emitted electrons depends on the in-depth concentration profile and is able to differentiate among thin and thick homogeneous overlayers, buried layers, three-dimensional island structures on different substrates, etc. The theoretical framework of the technique is described in detail in the literature [31]. The validity of the technique has been established through systematic experimental investigations and comparison to measurements on the same samples by Rutherford backscattering spectrometry, ion scattering spectrometry, and atomic force microscopy [31][32][33][34].…”

“…The theoretical framework of the technique is described in detail in the literature [31]. The validity of the technique has been established through systematic experimental investigations and comparison to measurements on the same samples by Rutherford backscattering spectrometry, ion scattering spectrometry, and atomic force microscopy [31][32][33][34]. The corresponding spectra processing is presently facilitated by the commercial software package QUASES-Tougaard [35].…”

Nitrogen plasma functionalization of low density polyethylene

“…A very important issue is the assessment of the in-depth atom distribution after different plasma treatments. With this aim, we have used the XPS peak shape analysis developed by Tougaard [25,26]. This analysis has provided a semiquantitative description of the oxygen/carbon depth distributions for both the "treated" and "aged" samples.…”

First nucleation steps during deposition of SiO2 thin films by plasma enhanced chemical vapour deposition

“…We used the QUASES [20] software to model and reproduce the experimental spectra. The basis of the method relies on the Tougaard's concepts of inelastic background analysis derived from an appropriate description of the electron energy losses during transport in the solid [15,16]. Outputs from the calculations are an in-depth concentration profile of photo-emitting atoms and/or the resulting surface morphology of the existing aggregates on the surface.…”

“…The method relies on the Tougaard's concepts of inelastic scattering or electrons in solids [15,16]. In addition, transmission electron microscopy (TEM) analysis was used to confirm the type of growth mechanism when silicon wafers were used as substrates.…”