Accuracy Study of Calorimetric Switching Loss Energy Measurements for Wide Bandgap Power Transistors

Miniaturization and Thermal Design of a 170 W AC/DC Battery Charger Utilizing GaN Power Devices

“…Current research based on analytical models and experimental comparison shows, that wide bandgap semiconductors, in particular GaN devices, lead to a major efficiency increase in soft-switching applications [18]. In order to select the most suitable semiconductor for the LLC stage, GaN and silicon carbide (SiC) power transistors were characterized with new calorimetric measurements and compared for use in the planned topology [20], [21]. In contrast to conventional characterization using the double-pulse test (DPT) method, the transient Z th -calibrated calorimetric measurement can be used to accurately determine even very small switching loss energy in ZVS operation.…”

“…The two-stage architecture consists of a totempole power factor correction (PFC) stage and an isolated resonant half-bridge LLC converter with synchronous rectification (SR). To enable high switching frequencies for small passive components, this well-established topology [14]- [19] is combined with a semiconductor selection based on new calorimetric measurements of zero-voltage switching (ZVS) losses [20], [21]. Miniaturized half-bridges and a 3D-stacked design of the AC/DC converter allow the compact connection of both stages while maintaining necessary isolation distances.…”

Optimised temperature fluctuation control strategy for lifetime improvement in aircraft electrical power distribution system

“…Modern wide bandgap power semiconductors have excellent material properties that enable power devices to operate at higher switching frequencies [12][13][14]. Compared with traditional silicon-based devices, the third-generation semiconductor devices, GaN, have higher switching frequency, higher electrothermal performance, lower inductance and lower resistance, which are also a more direct and efficient energy storage solution [15]. The application of the GaN power transistors in the DAB converter during the operation can significantly improve the power density and reduce the output waveform ripple due to its low zero reverse recovery gate charge and flat output capacitance.…”