A low loss monolithic sapphire has been developed for use as a novel transducer via the interaction between the electrical and mechanical resonances. Sapphire is an excellent material for use as a low noise electro-mechanical transducer due to its low mechanical and electrical losses. The sapphire sample under investigation is a single crystal of HEMEX grade 50mm in diameter and 100mm in length, with the c-axis aligned with the z-axis of the cylinder. We utilize high quality factor Whispering Gallery (WG) modes that have a high azimuthal number to improve electromagnetic confinement, which reduces the conductor loss due to the cavity. The sapphire cylinder is suspended about its midpoint by a single loop of wire to allow it to vibrate with minimal losses in its fundamental acoustic mode. The wire is in turn attached to a second stage of vibration isolation consisting of a two stage mass-spring system. The sapphire and suspension arrangement are situated in a cryogenic environment, and excitation of the acoustic resonance is by means of a mechanical relay switch that strikes the sapphire upon an end face. Modulation of electromagnetic modes occurs when the sapphire bar oscillates in its fundamental acoustic mode of vibration, causing dimensional changes to the crystal. This leads to a twofold mechanism of modulation of the WG resonances; firstly, the dimension is altered changing the boundary conditions of the WG resonance, and secondly, the permittivity is altered due to strain induced by the dimension change. The latter is the dominant effect. High electrical and mechanical quality factors are obtained at low temperatures (4.2K), allowing us to operate in a regime where parametric interactions dominate. In deriving the displacement sensitivity of the Monolithic Sapphire Transducer, the acoustic mode shape and WG field distribution must be taken into account, rather than the use of a simple mass-spring model. With the aid of this model we determine for the first time the strain induced coefficient of permittivity for sapphire, both perpendicular and parallel to the c-axis. By comparison with other work it has been determined that changes in the dielectric constant due to strain are approximately eight times smaller than changes caused by thermal expansion.