Accurate Doping Density Determination in SiC with Constant Surface Potential Corona Charging; Industry Ready Alternative to Hg-CV

Savtchouk, Alexandre; Wilson, Marshall; Łagowski, J.; Czett, Andor; Buday, Csaba

doi:10.4028/www.scientific.net/msf.858.509

Cited by 7 publications

(7 citation statements)

References 2 publications

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“…For measurement the spot is centered under the 2mm diameter vibrating electrode of the Kelvin probe. In 2015 the constant surface potential corona charging method was introduced in which the surface voltage is compensated to the same value for each charging step [5,6]. This method eliminates the effect of charge already deposited on the surface that alters subsequent corona charging due to electrostatic interaction.…”

Section: Principles Of the Corona-kelvin Techniquementioning

confidence: 99%

“…Bare wafer dopant measurement and depth profiling are critical for SiC and GaN providing a non-contact alternative to the mercury probe MCV technique [4]. A large range, superior precision, and repeatability of dopant measurement has been achieved only recently with a novel constant surface potential corona-charging method [5,6] and photo-assisted corona charge removal [5,7]. The latter restores the surface to the initial pre-charging condition and is essential for reproducibility of the measurement and repeatability testing.…”

Section: Introductionmentioning

confidence: 99%

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Recent Advancement in Charge and Photo-Assisted Non-Contact Electrical Characterization of SiC, GaN, and AlGaN/GaN HEMT

Findlay¹,

Wilson²,

Savtchouk³

et al. 2017

ECS Trans.

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The charge-based corona-Kelvin noncontact metrology, originally developed for Si IC fabrication, has recently been extended to wide energy gap semiconductors. We discuss principles of this extension and key applications, namely: high precision dopant measurement on SiC and GaN; two-dimensional electron gas characterization in AlGaN/GaN HEMT structures; interface and dielectric characterization on epi-layers with SiO2, SiN and Al2O3; comprehensive interfacial instability characterization of oxidized SiC; and whole wafer mapping of defects with a charge-assisted surface voltage technique. This powerful set of measurements is performed without fabrication of any test structures or electrical contact. Corresponding commercial tools are currently being introduced. Based on the historical example of silicon IC, we believe that this approach shall offer enhanced testing for research and for manufacturing process control with reduced cost and fast data feedback benefiting the wide-bandgap device technology.

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Section: Principles Of the Corona-kelvin Techniquementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Recent Advancement in Charge and Photo-Assisted Non-Contact Electrical Characterization of SiC, GaN, and AlGaN/GaN HEMT

Findlay¹,

Wilson²,

Savtchouk³

et al. 2017

ECS Trans.

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“…An extension to wide energy gap semiconductors required modification of procedures and hardware. Initial success was in non-contact dopant measurement on bare SiC wafers [1] that demonstrated precision and repeatability matching the performance of mercury probes Hg-CV. As discussed in a recent August 2017 review [2], the other demonstrated applications include a broad range of measurements on SiC, GaN, and AlGaN/GaN HEMT.…”

Section: Introductionmentioning

confidence: 99%

Accurate Dopant and Interface Characterization in Oxidized SiC with Refined Non-Contact C-V Technique

Savtchouk

Wilson

Almeida

et al. 2019

MSF

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The non-contact C-V technique has been recently gaining interest as a precise, cost and time effective metrology for wide-bandgap semiconductors. Originally focused on dopant measurement, non-contact C-V has been expanding to encompass wide-bandgap surface and interface characterization, including complex reliability issues critical for the future of power devices. In this work, we report progress achieved using a new direct method for determining the flatband voltage, VFB, and capacitance, CFB. Experimental results are presented for n-type oxidized epitaxial 4-H SiC. They demonstrate the approach and the unique self-consistent measurement producing an entire set of pertinent electrical parameters, including the interface trap density, Dit.

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“…Bare wafer dopant measurement and depth profiling are critical for SiC and GaN providing a non-contact alternative to the mercury probe C-V (MCV) technique. 7 A large range, superior precision, and repeatability of dopant measurement has been achieved only recently with z E-mail: Mwilson@semilabsdi.com a novel constant surface potential corona-charging method 8,16 and photo-assisted corona charge removal. 8,11 The latter is very effective for bare surfaces of SiC and GaN.…”

mentioning

confidence: 99%

“…7 A large range, superior precision, and repeatability of dopant measurement has been achieved only recently with z E-mail: Mwilson@semilabsdi.com a novel constant surface potential corona-charging method 8,16 and photo-assisted corona charge removal. 8,11 The latter is very effective for bare surfaces of SiC and GaN. This process restores the surface to the initial pre-charging condition and is essential for reproducibility of the measurement and repeatability testing.…”

mentioning

confidence: 99%

Review—Recent Advancement in Charge- and Photo-Assisted Non-Contact Electrical Characterization of SiC, GaN, and AlGaN/GaN HEMT

Wilson¹,

Findlay²,

Savtchouk³

et al. 2017

ECS J. Solid State Sci. Technol.

Self Cite

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The charge-based corona-Kelvin non-contact metrology, originally developed for Si IC fabrication, has recently been extended to wide energy gap semiconductors. We discuss principles of this extension and key applications, namely: high precision dopant measurement on SiC and GaN; two-dimensional electron gas characterization in AlGaN/GaN HEMT structures; interface and dielectric characterization on epi-layers with SiO 2 and SiN; comprehensive interfacial instability characterization of oxidized SiC; and whole wafer mapping of defects with a charge-assisted surface voltage technique, QUAD. This powerful set of measurements is performed without fabrication of any test structures or electrical contact. Corresponding commercial tools are currently being introduced. Based on the historical example of silicon IC, we believe that this approach shall offer enhanced testing for research and for manufacturing process control with reduced cost and fast data feedback benefiting wide-bandgap device technology. . This paper is part of the JSS Focus Issue on GaN-Based Electronics for Power, RF, and Rad-Hard Applications.Development of semiconductor devices and control of the manufacturing process requires cost effective metrology with rapid feedback to pilot or manufacturing lines. In this respect, silicon IC's have been benefiting from inventions (by IBM, Fishkill, NY 1 and by SDI, Tampa, FL 2 ) that created a foundation for the unique charge-based non-contact electrical metrology. 3In this technique, an electrical biasing is produced by corona charging of a surface and the response is monitored by measuring the surface voltage with a vibrating probe, such as a Kelvin-probe. The technique is commonly referred to as the corona-Kelvin method. 4 Corresponding commercial tools designed for Si wafers reduced the need for fabrication of electrical test devices and electric contacts; lowering the manufacturing cost and shortening the data feedback time from weeks to less than one hour. 5 The metrology has been continuously improved in sensitivity, precision, repeatability, and spatial resolution; meeting the demands of new technology nodes. It has been used by all major silicon IC manufacturing companies and has also been adopted by smaller silicon device fablines looking for cost effective metrology solutions.Very recent developments in corona-Kelvin, discussed in this work, are intended for rapidly advancing wide-bandgap semiconductor technology that includes SiC, GaN, and AlGaN/GaN heterostructures.

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Accurate Doping Density Determination in SiC with Constant Surface Potential Corona Charging; Industry Ready Alternative to Hg-CV

Cited by 7 publications

References 2 publications

Recent Advancement in Charge and Photo-Assisted Non-Contact Electrical Characterization of SiC, GaN, and AlGaN/GaN HEMT

Recent Advancement in Charge and Photo-Assisted Non-Contact Electrical Characterization of SiC, GaN, and AlGaN/GaN HEMT

Accurate Dopant and Interface Characterization in Oxidized SiC with Refined Non-Contact C-V Technique

Review—Recent Advancement in Charge- and Photo-Assisted Non-Contact Electrical Characterization of SiC, GaN, and AlGaN/GaN HEMT

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