Accurate electrical characterization of forward AC behavior of real semiconductor diode: Giant negative capacitance and nonlinear interfacial layer

Stimulated emission in GaN-based laser diodes far below the threshold region

“…The sample under discussions was a GaN-based LD Sony SLD3132VF diode lasing at 404 nm manufactured by Sony Corp. Its electrical characterizations are accomplished using ac IV method, which were described in detail elsewhere [18][19][20]. As shown in We record the spectra at different polarization angles under different injection levels to clarify their origins.…”

“…After systematically studied the GaAs-and InP-based LDs (typical lasing wavelengths at 650, 780, 870 and 1320 nm), they pointed out the synchronous step offsets of electrical parameters occurred at the onset of lasing. In particular, the separation of the quasi-Fermi levels of electron and holes across active region ( j V ) suddenly jumps to a saturated value at the onset of lasing [18][19][20]. Lately, we reported the stimulated emission related anomalous behavior in GaN-based LD.…”

Temperature‐dependent profile of the surface states and series resistance in (Ni/Au)/ AlGaN/AlN/GaN heterostructures

“…Such a behavior of C -V -T and G/ω -V -T shows that the material displays an inductive behavior. [11,12] It is believed that the injection of charge carriers involves a process of hopping to localized interface traps/states, but detailed physical mechanisms of injection are not yet understood.…”

“…[4] However, NC has, so far, no meaning to us and the concept of NC is still not widely recognized because of lack of trust in experimental data. [12] Therefore, in many cases experimental NC data were not reported in the literature due to confusion caused by the NC effect. [13] Practically, NC can be explained based on the behavior of temperature and frequency dependent admittance spectroscopy (C -V and G/ω -V) data.…”

“…[13] Practically, NC can be explained based on the behavior of temperature and frequency dependent admittance spectroscopy (C -V and G/ω -V) data. [12] As the electrons that surmount the Schottky barrier (SB) under forward bias do fill up the empty states at the interface and possess excess energy, when colliding with the electrons trapped at the N ss they could also knock electrons out of the traps, provided the binding energy of these traps is smaller than the SB energy. [2,13] Both the N ss and R s values of these devices are important parameters that affect the main electrical parameters.…”