Accurate LDMOS Model Extraction Using DC, CV and Small Signal S Parameters Measurements for Reliability Issues

Chetibi-Riah, Mouna; Masmoudi, Mohamed; Maanane, Hichame; Marcon, J.; Mourgues, K.; Kétata, M.; Eudeline, Philippe

doi:10.5772/7015

Cited by 1 publication

(2 citation statements)

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“…LAMBDA parameter can be extracted based on the same curve of Fig.4, requiring, however, the choice of a second point, "Point 2", with VD close to VDD (VD = 3.2V, in 0.35µm technology). Equation (12) allows calculating the variation of the channel length (ΔL) caused by an increase of the depletion layer [10,28]: (12) where IDS sat refers to the saturation current, measured in VD sat (Point 1), and IDS is the current measured in "Point 2". The ΔL value allows calculating LAMBDA with (13).…”

Section: B Proposed Methodsmentioning

confidence: 99%

“…These existing methods usually find good mathematical solutions but sometimes loose the relationship with the physical mean of parameters. At room temperatures and vicinities, where the model is well described, this fitting approach is not a problem, but when migrating to harsh environments, such as cryogenic temperatures (lower than 200K), where the model is not valid anymore, the lack of a relationship with physical parameters may lead to errors, due to many additional effects [9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

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A Physics-Oriented Parameter Extraction Method for MOSFET Libraries Generation

Faria¹,

d’Amore²

2020

JICS

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A novel method for MOSFET parameter extraction based on EKV 2.6 model is presented. The proposed method improves and updates the previous ones found in literature, since it describes setups and equations for the extraction of intrinsic DC parameters, not requiring any fitting procedures or optimization steps, as demanded by the previous ones. The physical approach used in the analysis allowed the achievement of these features, leading to the generation of libraries valid in all operating regions. Due to this approach, the method can be applied to new technologies or to harsh environments (such as cryogenic temperatures), where commercial libraries are not yet available. Validations of the method were done with data extracted from BSIM3v3 simulated curves, at room temperatures, and with experimental curves of an AMS 0.35μm transistor at 77K. In both cases, the EKV 2.6 generated libraries were able to reproduce the transistors behavior with errors less than 6%.

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Section: B Proposed Methodsmentioning

confidence: 99%