Accurate Measurement of Channel Temperature for AlGaN/GaN HEMTs

Wu, Mei; Ma, Xiaohua; Yang, Ling; Zhu, Qing; Zhang, Meng; Hao, Yue

doi:10.1109/ted.2018.2868807

Cited by 27 publications

(6 citation statements)

References 35 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Subsequently, the measurements were performed at various locations for different dissipated power of the active HEMT device. The piezoelectric stress which can be present due to the applied biases is neglected because it is not strong enough to exhibit a measurable difference [27].…”

Section: Methods For Temperature Extractionmentioning

confidence: 99%

Advanced Characterization Techniques and Analysis of Thermal Properties of AlGaN/GaN Multifinger Power HEMTs on SiC Substrate Supported by Three-Dimensional Simulation

Chvála

Szobolovszký

Kováč

et al. 2019

Journal of Electronic Packaging

View full text Add to dashboard Cite

In this paper, several methods suitable for real time on-chip temperature measurements of power AlGaN/GaN-based high-electron mobility transistor (HEMT) grown on a SiC substrate are presented. The measurement of temperature distribution on HEMT surface using Raman spectroscopy is presented. The second approach utilizes electrical I–V characteristics of the Schottky diode neighboring to the heat source of the active transistor under different dissipated power for temperature measurement. These methods are further verified by measurements with microthermistors. The features and limitations of the proposed methods are discussed. The thermal parameters of materials used in the device are extracted from the temperature distribution in the structure with the support of three-dimensional thermal simulation of the device. Thermal analysis of the multifinger power HEMT is performed. The effects of the structure design and fabrication processes from semiconductor layers, metallization, and packaging up to cooling solutions are investigated. The influence of individual layer properties on the thermal performance of different HEMT structures under different operating conditions is presented. The results show that the proposed experimental methods supported by simulation have a potential for the design, analysis, and thermal management of HEMT.

show abstract

Section: Methods For Temperature Extractionmentioning

confidence: 99%

Advanced Characterization Techniques and Analysis of Thermal Properties of AlGaN/GaN Multifinger Power HEMTs on SiC Substrate Supported by Three-Dimensional Simulation

Chvála

Szobolovszký

Kováč

et al. 2019

Journal of Electronic Packaging

View full text Add to dashboard Cite

show abstract

“…Electrical methods used for temperature measurements are simple, rapid, and noninvasive [10], [23], [24]. The drawback is that they underestimate peak channel temperature due to averaging over the active device region [25], [26]. Optical measurements such as micro-Raman and infrared (IR) thermography [27]- [30] provide information on the surface temperature [18], [19], [31], [32], not the hotspots inside 2DEG buried below the gate of each HEMT.…”

Section: Introductionmentioning

confidence: 99%

Unveiling T_max Inside GaN HEMT Based X-Band Low-Noise Amplifier by Correlating Thermal Simulations and IR Thermographic Measurements

Zafar

Durna

Koçer

et al. 2023

IEEE Trans. Device Mater. Relib.

View full text Add to dashboard Cite

This paper presents a method to reveal the channel temperature profile of high electron mobility transistors (HEMTs) in a multi-stage monolithic microwave integrated circuit (MMIC). The device used for this study is a two-stage Xband low-noise amplifier fabricated using 0.15 µm GaN-on-SiC technology with 4x50 µm and 4x75 µm HEMTs at the first and the second stage, respectively. The surface temperature measured through infrared (IR) thermography has a diffraction-limited resolution. Moreover, it is impossible to measure sub-surface Tmax residing inside the two-dimensional electron gas of HEMT using IR thermographic measurements. Finite element analysis (FEA) thermal simulations are performed in this study to acquire the surface and sub-surface temperature profiles of the whole MMIC. IR measurements and FEA simulations are integrated through a correlation-based method verifying the accuracy of the FEA-based temperature profiles. This method leads to accurately finding the hotspots in the MMIC, thus revealing the Tmax of both stages. The correlation method using two filters approach to match the measurements and simulated temperature profiles of all the stages finds its application in MMICs' high-temperature operating lifetime reliability tests.

show abstract

“…Electron source induced thermal transport and development of an analytic model to describe it effectively are the main scope of this work. Some recent works on the electrothermal properties simulation and modeling on GaN HEMTs are the following: Mei wu et al [ 8 ] proposed an electric method for the estimation of temperature in the AlGaN/GaN HEMT channel and also they built a 2D electrothermal model to describe the findings; Bikramjith chatterjee et al [ 9 ] examined the self heating effects on HEMTs using UV thermoreflectance imaging; Luoyun Yang et al [ 10 ] studied the electrothermal mechanism of GaN HEMT and proposed a two-dimensional analytic model for the device; Yu-Chao Hua et al [ 11 ] investigated ballistic-diffusive regime thermal spreading resistance in GaN HEMTs; and Qing Hao et al [ 12 ] used a coupled electron–phonon MC to investigate temperature distribution in GaN HEMT more accurately. Drawing motivation from the past studies on electrothermal properties of HEMT channel like nano-structures, we introduce an electron–phonon Monte Carlo study on a GaN computational domain with a localized, steady electron heat source.…”

Section: Introductionmentioning

confidence: 99%

Electron Heat Source Driven Heat Transport in GaN at Nanoscale: Electron–Phonon Monte Carlo Simulations and a Two Temperature Model

Joseph

Cao

2022

Materials

View full text Add to dashboard Cite

The thermal energy transport in semiconductors is mostly determined by phonon transport. However in polar semiconductors like GaN electronic contribution to the thermal transport is non-negligible. In this paper, we use an electron–phonon Monte Carlo (MC) method to study temperature distribution and thermal properties in a two-dimensional GaN computational domain with a localized, steady and continuous electron heat source at one end. Overall, the domain mimics the two-dimensional electron gas (2DEG) channel of a typical GaN high electron mobility transistor (HEMT). High energy electrons entering the domain from the source interact with the phonons, and drift under the influence of an external electric field. Cases of the electric field being uniform and non-uniform are investigated separately. A two step/temperature analytical model is proposed to describe the electron as well as phonon temperature profiles and solved using the finite difference method (FDM). The FDM results are compared with the MC results and found to be in good agreement.

show abstract

Accurate Measurement of Channel Temperature for AlGaN/GaN HEMTs

Cited by 27 publications

References 35 publications

Advanced Characterization Techniques and Analysis of Thermal Properties of AlGaN/GaN Multifinger Power HEMTs on SiC Substrate Supported by Three-Dimensional Simulation

Advanced Characterization Techniques and Analysis of Thermal Properties of AlGaN/GaN Multifinger Power HEMTs on SiC Substrate Supported by Three-Dimensional Simulation

Unveiling T_max Inside GaN HEMT Based X-Band Low-Noise Amplifier by Correlating Thermal Simulations and IR Thermographic Measurements

Electron Heat Source Driven Heat Transport in GaN at Nanoscale: Electron–Phonon Monte Carlo Simulations and a Two Temperature Model

Contact Info

Product

Resources

About

Accurate Measurement of Channel Temperature for AlGaN/GaN HEMTs

Cited by 27 publications

References 35 publications

Advanced Characterization Techniques and Analysis of Thermal Properties of AlGaN/GaN Multifinger Power HEMTs on SiC Substrate Supported by Three-Dimensional Simulation

Advanced Characterization Techniques and Analysis of Thermal Properties of AlGaN/GaN Multifinger Power HEMTs on SiC Substrate Supported by Three-Dimensional Simulation

Unveiling Tmax Inside GaN HEMT Based X-Band Low-Noise Amplifier by Correlating Thermal Simulations and IR Thermographic Measurements

Electron Heat Source Driven Heat Transport in GaN at Nanoscale: Electron–Phonon Monte Carlo Simulations and a Two Temperature Model

Contact Info

Product

Resources

About

Unveiling T_max Inside GaN HEMT Based X-Band Low-Noise Amplifier by Correlating Thermal Simulations and IR Thermographic Measurements