Accurate measurement of Mg and Al Kα1,2 X-ray energy profiles

Schweppe, John E.; Deslattes, Richard D.; Mooney, Tim; Powell, Cedric J.

doi:10.1016/0368-2048(93)02059-u

Cited by 72 publications

(55 citation statements)

References 49 publications

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“…A non-monochromatic MgKa 1;2 doublet X-ray source with a centroid photon energy h ¼ 1253.603 eV was used for all measurements. 7 The results of a survey scan for a 100-nm thick SiO 2 sample are shown in Figure 1.…”

Section: Silicon Dioxidementioning

confidence: 99%

Measurement of bandgap energies in low-k organosilicates

Nichols¹,

Li²,

Pei³

et al. 2014

Journal of Applied Physics

105

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In this work, experimental measurements of the electronic band gap of low-k organosilicate dielectrics will be presented and discussed. The measurement of bandgap energies of organosilicates will be made by examining the onset of inelastic energy loss in core-level atomic spectra using X-ray photoelectron spectroscopy. This energy serves as a reference point from which many other facets of the material can be understood, such as the location and presence of defect states in the bulk or at the interface. A comparison with other measurement techniques reported in the literature is presented. V C 2014 AIP Publishing LLC.

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Section: Silicon Dioxidementioning

confidence: 99%

Measurement of bandgap energies in low-k organosilicates

Nichols¹,

Li²,

Pei³

et al. 2014

Journal of Applied Physics

105

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“…In related work, new measurements of the Al and Mg x-ray spectra have been shown to be consistent with Lorentzian functions to represent each component of the spectra, and the positions of each component Ka 1, 2 for the Al and Mg spectra were taken from this analysis. 9 We used the FWHM values of each component recommended by Krause and Oliver10 (0.36 eV and 0.43 eV for Mg and Al, respectively) because these widths could only be determined to be in the range of 0.3È0.5 eV in the recent analysis. 9 The open symbols in Fig.…”

Section: Discussionmentioning

confidence: 99%

“…9 We used the FWHM values of each component recommended by Krause and Oliver10 (0.36 eV and 0.43 eV for Mg and Al, respectively) because these widths could only be determined to be in the range of 0.3È0.5 eV in the recent analysis. 9 The open symbols in Fig. 9 show the locations of the inÑection points in the simulated Ni photoemission spectra for Mg and Al x-rays as a function of the Gaussian FWHM.…”

Section: Discussionmentioning

confidence: 99%

Energy calibration of X-ray photoelectron spectrometers. Part III: Location of the zero point on the binding-energy scale

Miller

Powell

Gelius

et al. 1998

Surf. Interface Anal.

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Calibration of the binding energy scale in x‐ray photoelectron spectroscopy (XPS) requires location of the zero point. This zero point has previously been identified with the inflection point in the Fermi‐edge region of a valence‐band photoemission spectrum of nickel. Comparison of photoemission spectra of nickel and silver measured with monochromated x‐rays shows that the inflection points near the Fermi edge differ by 45±5 meV (where the stated uncertainty indicates the standard uncertainty) at an instrumental energy resolution of 0.30 eV. This difference is due to differences in the valence‐band densities of states (DOS) of the two metals. Simulations of the Ni photoemission spectrum have been performed based on the DOS calculated by Eckhardt and Fritsche, and the simulated spectrum agrees well with the measured spectrum in the near‐edge region. Additional simulations of the Ni photoemission spectrum have been carried out with both monochromated Al x‐rays and unmonochromated Mg and Al characteristic x‐rays to determine how the Ni near‐edge inflection point varies with the energy resolution of the electron energy analyzer in XPS. © 1998 John Wiley & Sons, Ltd.

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“…Because four of the six silicon acquisitions came from Wacker, this material was named WS1 and was used as the feedstock for diffraction crystals used in the NIST VDCS and at the high-resolution flat-crystal gamma-ray (GAMS4) facility at the ILL. Both of these installations accurately measure diffraction angles, which, when combined with the lattice spacing of the diffracting crystals, lead to accurate wavelength values [36][37][38][39] traceable to the definition of the meter. Detailed descriptions of the NIST VDCS and the GAMS4 facility can be found in Ref.…”

Section: Crystals For the Nist Vacuum Double Crystal And Gamma-ray Spmentioning

confidence: 99%

The Lattice Spacing Variability of Intrinsic Float-Zone Silicon

Kessler¹,

Szabo²,

Cline³

et al. 2017

J. RES. NATL. INST. STAN.

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Precision lattice spacing comparison measurements at the National Institute of Standards and Technology (NIST) provide traceability of X-ray wavelength and powder diffraction standards to the international system of units (SI). Here, we both summarize and document key measurements from the last two decades on six lots of intrinsic float-zone silicon, including unpublished results and recent internal-consistency checks. The comparison measurements link the unknown lattice spacing of a test crystal to a standard crystal for which the lattice spacing has been accurately determined by X-ray/optical interferometry in units traceable to the definition of the meter. The crystal that serves as the standard in all the comparisons is WASO 04, for which the lattice spacing is known with a relative uncertainty of 5 × 10 ; taking material variability into account, measurements yield relative uncertainties for the test materials of a few tens of nanometers. It is observed that in the case of nearly perfect modern intrinsic float-zone silicon, the variability of the lattice spacing is sufficiently small that for most diffraction applications, a recommended reference value may be used.

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Accurate measurement of Mg and Al Kα1,2 X-ray energy profiles

Cited by 72 publications

References 49 publications

Measurement of bandgap energies in low-k organosilicates

Measurement of bandgap energies in low-k organosilicates

Energy calibration of X-ray photoelectron spectrometers. Part III: Location of the zero point on the binding-energy scale

The Lattice Spacing Variability of Intrinsic Float-Zone Silicon

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