Accurate thermal analysis of GaN HFETs

Conway, A. M.; Asbeck, P.M.; Moon, J.S.; Micovic, M.

doi:10.1016/j.sse.2007.10.049

Cited by 7 publications

(9 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In EDLCs, energy is stored via electrostatic accumulation of charges at the electrode–electrolyte interface . In the case of pseudocapacitors, energy is stored by the electrosorption and/or reversible redox reactions at or near the surface of the electrode material, usually a conducting polymer or transition metal oxide . In general, both these mechanisms exist in a supercapacitor device.…”

Section: Principle Of Energy Storage In Ecsmentioning

confidence: 99%

“…Pseudocapacitance is a faradaic energy storage based on the fast redox reaction on the surface or near‐surface region of the electrodes, where electrosorption/electrodesorption occurs with charge transfer but without any bulk phase transformation upon charging/discharging (Figure b) . The state of charge ( q ) is a function of the electrode potential with the extent of faradaic charge/discharge ( Q ) passed .…”

Section: Principle Of Energy Storage In Ecsmentioning

confidence: 99%

“…The state of charge ( q ) is a function of the electrode potential with the extent of faradaic charge/discharge ( Q ) passed . The change in Q with respect to the potential gives rise to the derivative, d Q /d V , which corresponds to the pseudocapacitance ( C ∅ ) . Unlike EDL capacitance, which is associated with potential‐dependent accumulation of electrostatic charge (Figure a,b), pseudocapacitance is faradaic in nature (Figure c,d) .…”

Section: Principle Of Energy Storage In Ecsmentioning

confidence: 99%

See 2 more Smart Citations

Advanced Energy Storage Devices: Basic Principles, Analytical Methods, and Rational Materials Design

et al. 2017

View full text Add to dashboard Cite

Tremendous efforts have been dedicated into the development of high‐performance energy storage devices with nanoscale design and hybrid approaches. The boundary between the electrochemical capacitors and batteries becomes less distinctive. The same material may display capacitive or battery‐like behavior depending on the electrode design and the charge storage guest ions. Therefore, the underlying mechanisms and the electrochemical processes occurring upon charge storage may be confusing for researchers who are new to the field as well as some of the chemists and material scientists already in the field. This review provides fundamentals of the similarities and differences between electrochemical capacitors and batteries from kinetic and material point of view. Basic techniques and analysis methods to distinguish the capacitive and battery‐like behavior are discussed. Furthermore, guidelines for material selection, the state‐of‐the‐art materials, and the electrode design rules to advanced electrode are proposed.

show abstract

Section: Principle Of Energy Storage In Ecsmentioning

confidence: 99%

Section: Principle Of Energy Storage In Ecsmentioning

confidence: 99%

Section: Principle Of Energy Storage In Ecsmentioning

confidence: 99%

See 1 more Smart Citation

Advanced Energy Storage Devices: Basic Principles, Analytical Methods, and Rational Materials Design

et al. 2017

View full text Add to dashboard Cite

show abstract

“…As a supercapacitor electrode, most of the capacitance contributed by carbon‐based materials is electrical double‐layer capacitance (EDLC), which is a purely physical process without redox reaction that is much faster than faradaic reactions . Besides the better electrochemical kinetics, one of the most attractive features of EDLC is its wide potential window without redox potential range . Therefore, EDLC electrodes have overwhelming advantages compared with redox‐based materials regarding steady power output and high voltage in a single cell.…”

Section: Introductionmentioning

confidence: 99%

Carbon Thin Film Wrapped around a Three‐Dimensional Nitrogen‐Doped Carbon Scaffold for Superior‐Performance Supercapacitors

Yin

Zhao

et al. 2017

Chemistry A European J

View full text Add to dashboard Cite

A carbon thin film/carbon foam core/sheath structure was synthesized by chemical vapor deposition (CVD) on carbonized melamine foam. It has a specific capacitance of 310 F g at a current density of 1 A g and shows outstanding electrochemical performance in both aqueous and water-in-salt electrolytes. Electrochemical analysis by cyclic voltammetry and galvanostatic charge/discharge testing revealed a large capacitive contribution up to more than 90 % of its total capacitance. The core/sheath structure has advantages in ion transport and a high degree of utilization of the electrode surface, and the synthetic process provides a way to coat carbon thin film on any substrate by nickel-catalyzed CVD.

show abstract

“…The T-gate devices had a f T of 100 GHz and a f max of 200 GHz at V ds = 10 V. Individual device die were separated and attached with Au/Sn eutectic solder to a gold-plated Kovar or copper carriers for T-gate devices or field plate devices, respectively. While thermal models have already been established for field plate devices [23], ANSYS TAS software was used to develop thermal models for the T-gate devices and to extract the device thermal resistance, which was used to monitor peak junction temperatures for the stress tests.…”

mentioning

confidence: 99%

Reliability of T‐gate AlGaN/GaN HEMTs

Burnham

Bowen

Willadsen

et al. 2011

Phys. Status Solidi C

View full text Add to dashboard Cite

For the first time, we report on degradation mechanisms of short gate length (Lg = 0.15 µm) T‐gate AlGaN/GaN HEMTs, and compare to previously reported findings for GaN field plate devices of the same gate length. Both types of studied devices were subjected to temperature‐stress tests in air. T‐gate devices were stressed with a drain bias of 15 V, while field plate devices were stressed with a drain bias of 30 V. Some T‐gate devices were also stressed in dry nitrogen to observe any impact of the environment. The devices stressed in air failed faster and at a lower junction temperature than the devices stressed in nitrogen. FIB‐STEM, EDS and EELS analysis of devices that reached failure criteria revealed that the devices stressed in air may have failed faster due to an oxide formation. For a T‐gate device stressed in air, an oxide formation was observed directly underneath the gate foot in a TEM image. For a field plate device stressed in air, an oxide was observed at the interface between the gate foot metal and the field plate dielectric on the drain side of the gate in a TEM image. Gate sinking into the barrier was observed in a TEM image for a T‐gate device stressed in dry nitrogen, while no gate sinking was observed or has been reported for field plate devices. Physics‐based device modeling of the two structures at the different stress bias conditions reveals that the electric field under the gate is much higher for the T‐gate device compared to the field plate device, despite the much higher drain bias for the field plate device. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

Accurate thermal analysis of GaN HFETs

Cited by 7 publications

References 20 publications

Advanced Energy Storage Devices: Basic Principles, Analytical Methods, and Rational Materials Design

Advanced Energy Storage Devices: Basic Principles, Analytical Methods, and Rational Materials Design

Carbon Thin Film Wrapped around a Three‐Dimensional Nitrogen‐Doped Carbon Scaffold for Superior‐Performance Supercapacitors

Reliability of T‐gate AlGaN/GaN HEMTs

Contact Info

Product

Resources

About