2016
DOI: 10.1109/tmtt.2016.2549527
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Accurate Transistor Modeling by Three-Parameter Pad Model for Millimeter-Wave CMOS Circuit Design

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Cited by 12 publications
(3 citation statements)
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“…5(c)], and the mismatch between simulation and measurement is likely due to the transistor model inaccuracy over 130 GHz. This is because these two transistors (20 × 1 and 20 × 2 µm) are newly prepared for this design, while the transmission line and capacitors have been used in the W-band and 300-GHz band [65], [69], [70]. Fig.…”
Section: B Wideband Rf Pa and Rf Vgamentioning
confidence: 99%
“…5(c)], and the mismatch between simulation and measurement is likely due to the transistor model inaccuracy over 130 GHz. This is because these two transistors (20 × 1 and 20 × 2 µm) are newly prepared for this design, while the transmission line and capacitors have been used in the W-band and 300-GHz band [65], [69], [70]. Fig.…”
Section: B Wideband Rf Pa and Rf Vgamentioning
confidence: 99%
“…However, the intrinsic model of the transistor in practice is shown in Fig. 6 [21]. Cgd and Rgd jointly create the feedback path between the gate and drain, and they can be equivalent to a capacitor with a certain quality factor, which can be calculated as:…”
Section: B Neutralization Capacitance Designmentioning
confidence: 99%
“…where Cgd and Rgd are intrinsic parameters of the transistor so they are independent of the operating frequency [21]. Therefore, the Q of this equivalent capacitance will decrease as the operating frequency increases.…”
Section: B Neutralization Capacitance Designmentioning
confidence: 99%