Accurate two-dimensional modelling of the titanium silicide process with an application to a thin base n-p-n bipolar transistor

Fornara, P.; Denorme, S.; Berranger, Eva de; Mathiot, D.; Mouis, M.; Poncet, A.

doi:10.1016/s0026-2692(97)00019-0

Cited by 4 publications

(2 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The dark region above the residual nanowire represents a void, which likely resulted from silicon out-diffusion into the titanium layer, as evident from the XEDS maps in figure 12. The void formation can be explained by the fact that Si, as the dominant diffusion species in the Si-Ti system [40,41], migrates into the Ti-rich layer, leaving a 'Kirkendall void' in the nanowire.…”

Section: Resultsmentioning

confidence: 99%

Correlation between the performance and microstructure of Ti/Al/Ti/Au Ohmic contacts to p-type silicon nanowires

Motayed¹,

Bonevich²,

Krylyuk³

et al. 2011

Nanotechnology

View full text Add to dashboard Cite

Understanding the electrical and microstructural aspects of contact formation at nanoscale is essential for the realization of low-resistance metallization suitable for the next generation of nanowire based devices. In this study, we present detailed electrical and microstructural characteristics of Ti/Al/Ti/Au metal contacts to p-type Si nanowires (SiNWs) annealed at various temperatures. Focused ion beam cross-sectioning techniques and scanning transmission electron microscopy (STEM) were used to determine the microstructure of the source/drain metal contacts of working SiNW field-effect transistors (FETs) annealed for 30 s in the 450-850 °C temperature range in inert atmosphere. Formation of titanium silicides is observed at the metal/semiconductor interface after the 750 °C anneal. Extensive Si out-diffusion from the nanowire after the 750 °C anneal led to Kirkendall void formation. Annealing at 850 °C led to almost complete out-diffusion of Si from the nanowire core. Devices with 550 °C annealed contacts had linear electrical characteristics; whereas the devices annealed at 750 °C had the best characteristics in terms of linearity, symmetric behavior, and yield. Devices annealed at 850 °C had poor yield, which can be directly attributed to the microstructure of the contact region observed in STEM.

show abstract

Section: Resultsmentioning

confidence: 99%

Correlation between the performance and microstructure of Ti/Al/Ti/Au Ohmic contacts to p-type silicon nanowires

Motayed¹,

Bonevich²,

Krylyuk³

et al. 2011

Nanotechnology

View full text Add to dashboard Cite

show abstract

“…It must also account for possible transient enhanced diffusion effects, which may occur during lower temperature thermal steps (if an ion implantation has been performed earlier in the process) or during silicidation. [12,13] …”

Section: Dopant Diffusionmentioning

confidence: 99%

VLSI integration of SiGe epitaxial base bipolar transistors

Mouis

Chantre²

1998 URSI International Symposium on Signals, Systems, and Electronics. Conference Proceedings (Cat. No.98EX167)

Self Cite

View full text Add to dashboard Cite

This paper presents the state-of-the-art concerning integrated Si/Si,,GeJSi Heterojunction Bipolar Transistors (SiGe HBTs), with special emphasis on what are the real strong points of the device, once integration constraints huve been accounted for. A review of some representative technologies is given, with a tentative classification according to the tradeof which has been chosen between performance, integrability and process complexity. Examples of low-cost integration of SiGe HBTs in an industrial BiCMOS technology are provided as an illustration.R,,, it is possible to get a smaller base resistance with a smaller device length (smaller current). In implanted

show abstract

Finite element analysis of stress evolution in Si based front and back ends micro structures

Senez

Armigliato²,

Carlotti³

et al.

International Conferencre on Simulation of Semiconductor Processes and Devices

View full text Add to dashboard Cite

Accurate two-dimensional modelling of the titanium silicide process with an application to a thin base n-p-n bipolar transistor

Cited by 4 publications

References 19 publications

Correlation between the performance and microstructure of Ti/Al/Ti/Au Ohmic contacts to p-type silicon nanowires

Correlation between the performance and microstructure of Ti/Al/Ti/Au Ohmic contacts to p-type silicon nanowires

VLSI integration of SiGe epitaxial base bipolar transistors

Finite element analysis of stress evolution in Si based front and back ends micro structures

Contact Info

Product

Resources

About