Magnetoresistance based information devices have attracted
much
attention due to the ability to utilize spins as information carriers.
To promote the magnetoresistance-based devices, ultrahigh magnetoresistance
ratios are highly desirable for magnetic sensing, memory, and artificial
intelligent devices, etc. However, today the magnetoresistance devices
are facing the challenge of limited magnetoresistance ratio, low work
temperature, or high magnetic field, which calls for proper theories
and mechanisms. To address it, we first introduce the flexible bending-controlled
magnetoresistance device based on the La0.67Ba0.33MnO3 film. Due to the anisotropic resistance of the La0.67Ba0.33MnO3 film and the nonlinear
amplification effect of the Zener diode, the device has exhibited
strong magnetoresistive performance (∼8725% at 1 T, 300 K).
Combining the assist from mechanical bending and diode, high magnetic
field sensitivity with large magnetoresistance ratio (∼1.7
× 104% at 1 T, 300 K) and low work current (∼0.15
mA) is simultaneously achieved at room temperature, which is over
104 times larger than that of the planar La0.67Ba0.33MnO3 film. Based on the above results,
we propose one but not the only possible application as tunable multistage
switch. Our findings may pave a strategy to develop flexible diode-enhanced
magnetoresistance device with ultrahigh magnetoresistance ratios and
bending tunable performances.