Fabrication of well-dispersed thin
graphene oxide (GO) films (GOFs)
has always been a challenge. Herein, a quick preparation method for
GOFs was developed using our homemade GO with a large lateral size.
The film can be prepared in less than 2 h via a metal framework-induced
self-assembly process. The thickness of the films can be as thin as
∼15.5 μm, which will be thinner with compression. When
it is used as a flexible modification layer on the Zn metal for aqueous
Zn-ion batteries, Zn can grow along the [010] direction in plane and
stack orderly along the [002] direction even on the Cu substrate with
GOF through epitaxial plating owing to negligible lattice mismatch
between the (002) plane of Zn and the hexagonal ring [also (002) plane
for graphite] of GO. Meanwhile, the rich O groups on the GO film can
provide abundant zincophilic points and promote uniform distribution
of Zn2+ around the anode. Finally, dendrite-free and dense
Zn stripping/plating can be achieved and well remained. The GOF@Zn
symmetric cell reveals long cyclic stability of 1300 h at 1 mA cm–2 and 1 mA h cm–2. It still can remain
at 350 h even at a very high current density of 10 mA cm–2 accompanied by a high areal capacity of 10 mA h cm–2. With the same plating amount of 5 mA h cm–2,
the thickness of the plated Zn is only ∼10 μm with GOF
modification, very close to the theoretical value of 8.54 μm,
much thinner than that without GOF (∼18 μm), indicating
very dense deposition. Full cells assembled with the GOF@Zn anode
and the MnO2 cathode exhibit a capacity retention rate
of 71% over 1000 cycles at 0.7 A g–1, showing much
better cycling performance than that using bare Zn.