Achievement of High Density InAs/GaInAsP Quantum Dots on Misoriented InP(001) Substrates Emitting at 1.55 µm

Georges, Elias; Létoublon, Antoine; Piron, Rozenn; Alghoraibi, Ibrahim; Nakkar, Abdulhadi; Chevalier, Nicolas; Tavernier, Karine; Corre, Alain Le; Bertru, Nicolas; Loualiche, Slimane

doi:10.1143/jjap.48.070204

Cited by 12 publications

(3 citation statements)

References 14 publications

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“…These substrates helped in modifying the In diffusion length arising from the atomic steps thus resulting in more isotropic nanostructure formation, as discussed initially in this section. Elias et al [72] employed a growth interruption step after InAs deposition on 1.18 µm InGaAsP buffer layer for 30 s under As overpressure, and compared the nanostructure formation on the nominal (N), and 2º off-cut towards (111)A and (111)B, (100) InP substrates forming surface steps namely; A steps and B steps which will be used henceforth. At high As flow rate, larger (~50 nm diameter) and lower density (~2×10 10 cm -2 ) Qdots were formed independent of the substrate orientation.…”

Section: Qdots On (100) Inp Substratementioning

confidence: 99%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, innovation in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Eventual achievements for lasers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. In this article, we review the progress of both Qdots and Qdash devices based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance.2

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Section: Qdots On (100) Inp Substratementioning

confidence: 99%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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“…[1−3] On the other hand, InAs/InP QD lasers are of great interest as they can emit in a wide wavelength range (1.4-2.1 µm), which has promising prospects in optical fiber communication, gas detection, and biomedical applications. [4,5] Several growth techniques including chemical beam epitaxy (CBE), [6] molecular beam epitaxy (MBE) [7−9] and metalorganic chemical vapor deposition (MOCVD) have been proposed to grow the InAs/InP QDs. [4,10−14] However, due to the low lattice mismatch and the anion exchange across the interface, the growth of high quality of InAs/InP QDs is more difficult.…”

Section: (Received 22 February 2013)mentioning

confidence: 99%

InAs/InGaAsP/InP Quantum Dot Lasers Grown by Metalorganic Chemical Vapor Deposition

Luo¹,

Ji²,

Gao³

et al. 2013

Chinese Phys. Lett.

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“…Correspondingly, 1.55 µm InAs QDs growth has been accomplished using the same technique for a long time. However, results on InP (001) substrates [6,[23][24][25], are not as impressive as those on InP (311) substrates [26,20,22]. This may be due to the fact that the shape of the QD on InP (001) is more or less inclined to form a quantum dash, although, on InP (311), it is not.…”

mentioning

confidence: 90%

Optically enhanced single- and multi-stacked 1.55 μm InAs/InAlGaAs/InP quantum dots for laser applications

Jia

Dear

et al. 2023

J. Phys. D: Appl. Phys.

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For the development of InAs/InP quantum dot (QD) lasers for 1.55 µm telecom wavelength, there are two main challenges: 1) morphological preference for quantum dashes over quantum dots, and 2) generally poor size uniformity of quantum dots (dashes). This study addresses the issues, in synchronous, by demonstrating the improved optical properties of 1.55 μm InAs/InP QDs at room temperature with excellent reproducibility. A high-density (~4×1010/cm2) dot-like morphology was initially attained via adjusting the growth parameters, albeit with a large full-width at half maximum (FWHM) of ~80 meV and a peak position of a wavelength longer than 1.55 µm. For improvement, the indium-flush technique was employed, which enhanced the uniformity of InAs QDs and substantially lowered the FWHM of five (single) stacked QDs to 50.9 meV (47.9 meV). This technique also blue-shifted the emission peak to 1530.2 nm (1522 nm). The InAs/InP QDs presented are appropriate for the fabrication of high-performance 1.55 µm lasers on InP (001) and, potentially, emerging light sources on the important Si (001).

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Achievement of High Density InAs/GaInAsP Quantum Dots on Misoriented InP(001) Substrates Emitting at 1.55 µm

Cited by 12 publications

References 14 publications

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

InAs/InGaAsP/InP Quantum Dot Lasers Grown by Metalorganic Chemical Vapor Deposition

Optically enhanced single- and multi-stacked 1.55 μm InAs/InAlGaAs/InP quantum dots for laser applications

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