2018 IEEE Workshop on Microelectronics and Electron Devices (WMED) 2018
DOI: 10.1109/wmed.2018.8360835
|View full text |Cite
|
Sign up to set email alerts
|

Achieving 16 Gb/s Single-Ended Signaling in High-Performance Graphics Memory

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2

Citation Types

0
2
0

Year Published

2019
2019
2023
2023

Publication Types

Select...
4
1

Relationship

0
5

Authors

Journals

citations
Cited by 5 publications
(2 citation statements)
references
References 5 publications
0
2
0
Order By: Relevance
“…The demand for high-bandwidth DRAMs is constantly increasing due to the datacentric trend [1][2][3]. DRAM bandwidth can be increased by raising the number of I/O pins or the clock frequency [4]. However, double data-rate (DDR), low-power double data-rate (LPDDR), and graphic double data-rate (GDDR) memories have a pin count limitation, so a higher clock frequency is required to increase the data-rate per pin.…”
Section: Introductionmentioning
confidence: 99%
“…The demand for high-bandwidth DRAMs is constantly increasing due to the datacentric trend [1][2][3]. DRAM bandwidth can be increased by raising the number of I/O pins or the clock frequency [4]. However, double data-rate (DDR), low-power double data-rate (LPDDR), and graphic double data-rate (GDDR) memories have a pin count limitation, so a higher clock frequency is required to increase the data-rate per pin.…”
Section: Introductionmentioning
confidence: 99%
“…The diversity of high-speed I/O standards for DRAM requires an automated way of doing production tests over a variety of channels [1,2,3,4,5,6,7]. DRAM standards, such as DDR4, LPDDR4, GDDR5, and HBM address different application-specific needs in PCs, mobile devices, graphics processors, and artificial intelligence (AI) accelerators, respectively [8,9,10,11], and use different I/O channels whose loss characteristics span a wide variety, as shown in Fig.…”
Section: Introductionmentioning
confidence: 99%