Achieving excellent ferroelectric and dielectric performance of HfO2/ZrO2/HfO2 thin films under low operating voltage

Yan, Fei; Liao, Jiajia; Cao, Ke; Jia, Shijie; Zhou, Yichun; Liao, Min

doi:10.1016/j.jallcom.2023.172267

Cited by 13 publications

(3 citation statements)

References 38 publications

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“…Superlattice and layer structures provide a further improvement of the ferroelectric performance of hafnia-based films. Thus, “wake-up” free ferroelectric capacitors based on HfO 2 /ZrO 2 superlattices or capacitors with improved ferroelectric and dielectric performances have been reported. , …”

Section: Introductionmentioning

confidence: 99%

“…Thus, "wake-up" free ferroelectric capacitors based on HfO 2 / ZrO 2 superlattices 29 or capacitors with improved ferroelectric and dielectric performances have been reported. 30,31 In this work, the focus will be on ferroelectric epitaxial doped hafnia films deposited on three different substrates to compare their structural properties and to determine their crystal structure. Thus, Zr/Y:HfO 2 /La 0.7 Sr 0.3 MnO 3 /SrTiO 3 (100), Zr/Y:HfO 2 /La 0.7 Sr 0.3 MnO 3 /SrTiO 3 /Si (100), and Zr/ Y:HfO 2 /Al 2 O 3 (0001) systems are investigated here.…”

Section: Introductionmentioning

confidence: 99%

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Distinguishing the Rhombohedral Phase from Orthorhombic Phases in Epitaxial Doped HfO₂ Ferroelectric Films

Petraru,

Gronenberg,

Schürmann

et al. 2024

ACS Appl. Mater. Interfaces

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Epitaxial strain plays an important role in the stabilization of ferroelectricity in doped hafnia thin films, which are emerging candidates for Si-compatible nanoscale devices. Here, we report on epitaxial ferroelectric thin films of doped HfO 2 deposited on La 0.7 Sr 0.3 MnO 3 -buffered SrTiO 3 substrates, La 0.7 Sr 0.3 MnO 3 SrTiO 3 -buffered Si (100) wafers, and trigonal Al 2 O 3 substrates. The investigated films appear to consist of four domains in a rhombohedral phase for films deposited on La 0.7 Sr 0.3 MnO 3 -buffered SrTiO 3 substrates and two domains for those deposited on sapphire. These findings are supported by extensive transmission electron microscopy characterization of the investigated films. The doped hafnia films show ferroelectric behavior with a remanent polarization up to 25 μC/cm 2 and they do not require wake-up cycling to reach the polarization, unlike the reported polycrystalline orthorhombic ferroelectric hafnia films. KEYWORDS: ferroelectric HfO 2 , ultrathin film epitaxy, hafnia, epitaxial Hf 0.5 Zr 0.5 O 2 thin films, Y-doped ferroelectric HfO 2 .

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Distinguishing the Rhombohedral Phase from Orthorhombic Phases in Epitaxial Doped HfO₂ Ferroelectric Films

Petraru,

Gronenberg,

Schürmann

et al. 2024

ACS Appl. Mater. Interfaces

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“…Recently, a layered-structure design strategy was employed to optimize the dielectric, ferroelectric, and energy storage performances of lead-free dielectrics. [26][27][28] This approach can achieve a balance between polarization and breakdown strength, as well as a synergistic effect between different dielectrics. Meanwhile, layered-structure dielectrics can also exhibit interface-blocking effects, which can further improve breakdown strength.…”

Section: Introductionmentioning

confidence: 99%

Ultrahigh Energy Storage Density and Efficiency of Lead‐Free Dielectrics with Sandwich Structure

Yan,

Qian,

Lin

et al. 2023

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Lead‐free dielectric capacitors have attracted significant research interest for high‐power applications due to their environmental benefits and ability to meet the demanding performance requirements of electronic devices. However, the development of lead‐free ceramic dielectrics with outstanding energy storage performance remains a challenge. In this study, environmentally friendly ceramic dielectrics with sandwich structures are designed and fabricated to improve energy storage performance via the synergistic effect of different dielectrics. The chemical compositions of the outer and middle layers of the sandwich structure are 0.35BiFeO3‐0.65SrTiO3 and Bi0.39Na0.36Sr0.25TiO3, respectively. The experimental and theoretical simulation results demonstrate that the breakdown strength is over 700 kV cm−1 for prepare sandwich structure ceramics. As a result, an ultrahigh recoverable energy storage density of 9.05 J cm−3 and a near‐ideal energy storage efficiency of 97% are simultaneously achieved under 710 kV cm−1. Furthermore, the energy storage efficiency maintains high values (≥ 96%) within 1–100 Hz and the power density as high as 188 MW cm−3 under 400 kV cm−1. These results indicate that the designed lead‐free ceramics with a sandwich structure possess superior comprehensive energy storage performance, making them promising lead‐free candidates in the energy storage field.

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Valence modulation induced high-energy storage properties in BNT-based ceramics

Wang,

Peng,

Wang

et al. 2024

Ceramics International

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Achieving excellent ferroelectric and dielectric performance of HfO2/ZrO2/HfO2 thin films under low operating voltage

Cited by 13 publications

References 38 publications

Distinguishing the Rhombohedral Phase from Orthorhombic Phases in Epitaxial Doped HfO₂ Ferroelectric Films

Distinguishing the Rhombohedral Phase from Orthorhombic Phases in Epitaxial Doped HfO₂ Ferroelectric Films

Ultrahigh Energy Storage Density and Efficiency of Lead‐Free Dielectrics with Sandwich Structure

Valence modulation induced high-energy storage properties in BNT-based ceramics

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Achieving excellent ferroelectric and dielectric performance of HfO2/ZrO2/HfO2 thin films under low operating voltage

Cited by 13 publications

References 38 publications

Distinguishing the Rhombohedral Phase from Orthorhombic Phases in Epitaxial Doped HfO2 Ferroelectric Films

Distinguishing the Rhombohedral Phase from Orthorhombic Phases in Epitaxial Doped HfO2 Ferroelectric Films

Ultrahigh Energy Storage Density and Efficiency of Lead‐Free Dielectrics with Sandwich Structure

Valence modulation induced high-energy storage properties in BNT-based ceramics

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Distinguishing the Rhombohedral Phase from Orthorhombic Phases in Epitaxial Doped HfO₂ Ferroelectric Films

Distinguishing the Rhombohedral Phase from Orthorhombic Phases in Epitaxial Doped HfO₂ Ferroelectric Films