Achieving High Responsivity and Detectivity in a Quantum-Dot-in-Perovskite Photodetector

Abstract

This work reports on quantum dots (QDs) in perovskite photodetectors showing high optoelectronic performance via quantum-dot-assisted charge transmission. The selfpowered broad-band photodetector constructed with SnS QDs in FAPb 0.5 Sn 0.5 I 3 perovskite can capture incoming optical signals directly at zero bias. The QDs-in-perovskite photodetector exhibits a high sensitivity in the wavelength range from 300 to 1000 nm. Its responsivity at 850 nm reaches 521.7 mA W −1 , and a high specific detectivity of 2.57 × 10 12 jones can be achieved, which is well beyond the level of previous self-powered broad-band photodetectors. The capability of quantum-dot-in-perovskite photodetectors as data receivers has been further demonstrated in a visible-light communication application.

Amino-bridged attapulgite@perovskite nanocomposites: the role of bridge linkage in their optical properties and stabilities

“…6 These properties position perovskites as potential candidates for a wide range of applications, such as light-emitting diodes (LEDs), [7][8][9] solar cells, [10][11][12] lasers [13][14][15] and photodetectors. [16][17][18] However, the instability issues of perovskites, including their high sensitivity to heat and photodegradation, have hindered their practical applications. Therefore, it is crucial to explore effective approaches to enhance their stability.…”

Suppressed Auger recombination and enhanced emission of InP/ZnSe/ZnS quantum dots through inner shell manipulation

“…Semiconductor quantum dots (QDs) have been the subject of extensive research in important science domains including solar cells, photodetectors, bioimaging, and light-emitting diodes for their size-tunable emission qualities, higher photostability, and higher photoluminescence quantum yields (PL QYs). [1][2][3][4] In recent years, cadmium chalcogenide QDs have been widely investigated for their superior optical properties to meet the requirements of photoelectric devices. 5,6 However, the toxicity of cadmium severely limits their further commercialization.…”

A hybrid quantum dot:MXene bulk heterojunction for an efficient infrared self-powered photodetector

“…Regarding this problem, two-dimensional (2D) semiconductors were adopted as a single, separate channel layer to help with charge extraction in photoconduction and phototransistor structured QD PDs, which was proved to be an efficient way to improve the photodetecting performance of these devices. [9][10][11] However, for self-powered QD PDs, photovoltaic structured devices that can work at a zero bias voltage with a low energy consumption, constructing such a separate charge channel is not applicable because of the vertically aligned device structure. Although charge transfer and transport in this device are energetically convenient under the inner electronic field, the devices still suffer from relatively insufficient charge hopping and collection in the bare QDs film that is rich in charge trap states.…”

“…Regarding this problem, two-dimensional (2D) semiconductors were adopted as a single, separate channel layer to help with charge extraction in photoconduction and phototransistor structured QD PDs, which was proved to be an efficient way to improve the photodetecting performance of these devices. 9–11…”