Achieving large and nonvolatile tunable magnetoresistance in organic spin valves using electronic phase separated manganites

Abstract

Tailoring molecular spinterface between novel magnetic materials and organic semiconductors offers promise to achieve high spin injection efficiency. Yet it has been challenging to achieve simultaneously a high and nonvolatile control of magnetoresistance effect in organic spintronic devices. To date, the largest magnetoresistance (~300% at T = 10 K) has been reached in tris-(8-hydroxyquinoline) aluminum (Alq 3 )-based organic spin valves (OSVs) using La 0.67 Sr 0.33 MnO 3 as a magnetic electrode. Here we demonstrate that one type of perovskite manganites, i.e., a (La 2/3 Pr 1/3 ) 5/8 Ca 3/8 MnO 3 thin film with pronounced electronic phase separation (EPS), can be used in Alq 3 -based OSVs to achieve a large magnetoresistance (MR) up to 440% at T = 10 K and a typical electrical Hanle effect as the Hallmark of the spin injection. The contactless magnetic field-controlled EPS enables us to achieve a nonvolatile tunable MR response persisting up to 120 K. Our study suggests a new route to design high performance multifunctional OSV devices using electronic phase separated manganites.

Large Low-Field Magnetoresistance (LFMR) Effect in Free-Standing La0.7Sr0.3MnO3 Films

“…Achieving a simple structure, low power consumption, and nonvolatility has always been a goal in the development of magnetic response oxide memory. Moreover, the development of flexible electronic devices also creates new demands for oxides. − Therefore, finding a material with both flexible and stable storage functions has become a hot topic in the field of oxides. Among the numerous oxides, lanthanum manganite perovskites, such as La 0.7 Sr 0.3 MnO 3 (LSMO), have shown great promise due to their complex magnetic and electrical transport properties.…”

Unveiling the role of Fe3O4 in polymer spin valve near Verwey transition

“…S1 in the ESM). As a consequence, a maximal MR is observed at Verwey transition point due to the increased spin current into the P3HT space layer with less twin boundary-induced spin scattering effect [51].…”

“…Inspired by the influence of the magnetic phase transition on the MR response of LPCMO-OSV [51], a phenomenological hypothesis was proposed to explain the non-monotonicity dependence of MR ratio vs. temperature, as shown in Figs. 5(a)-5(c).…”

Perovskite Puzzle for Revolutionary Functional Materials

“…The most known and the most magnetic field sensitive devices are SQUID magnetometers and tomographs utilizing the quantum Josephson's effect for a special gap / boundary architecture within a superconductor (Colclough et al, 1987 ). CMR materials for spintronics utilize artificial junctions to operate with spin-polarized carriers created by a magnetic field in spin valves and other elements of spintronics (Yang et al, 2019 ); in the simple case of magnetic sensors, grain boundaries within CMR manganites play a major role for target variation of electrical conductivity. It should be noted that, oppositely, multiple grain boundaries play a negative role for HTSCs even in those low-current applications.…”