“…The average E b value displays a maximum value of ∼574.3 kV cm −1 and ∼681.7 kV cm −1 for B 2/3 MT8 and B 2/3 ZT8 ceramics, which are higher than that of BMT8 (∼435.2 kV cm −1 ), BZT8 (∼620.2 kV cm −1 ) and most of the BT-, Sr 0.7 Bi 0.2 TiO 3 - (SBT), NN-, and BNT-based ceramics reported in the literature. 3,5,7,9,10–13,15,25,26,29–32,38,39,50–57 The improved E b induced by Bi 2/3 (M 1/3 Ta 2/3 )O 3 doping can be attributed to several aspects: (i) defect chemistry engineering increases the insulation resistivity of ceramics, which inhibits the transportation of conductive carriers (oxygen vacancies); (ii) the wider band gap of Ta 2 O 5 (∼4 eV) can enlarge the energy gap and effectively decrease the leakage current and energy loss at a high electric field, leading to improved intrinsic breakdown strength; 3,17 and (iii) the high quality ceramics feature relatively small grain size and high density (>95%), favorable for dielectric breakdown behavior as a result of the high resistivity of grain boundaries. 7,31,51…”