A LaNbON2 semiconductor
is capable of absorbing long
light wavelengths up to 750 nm, which indicates a promising n-type
material for solar water splitting to produce hydrogen. In this study,
we present enhanced photocatalytic and photoelectrochemical activities
over the particulate LaNbON2 during visible-light-driven
water oxidation. La-rich oxide mixtures, prepared by the calcination
of La2O3–Nb2O5 with
La/Nb ratios greater than 1.00, were proposed as a starting precursor
for the synthesis of less-defective LaNbON2. The La-rich
condition caused the synthesis of smaller LaNbON2 particles
with larger BET surface areas, which were favorable for the complete
nitridation under mild conditions. The LaNbON2 particles
prepared from the La/Nb ratio of 1.20, which were capable of absorbing
a wide range of visible light up to approximately 750 nm and above,
completed the nitridation at 1123 K for 15 h. The La-rich condition
promoted reduced bulk defect density of LaNbON2 and suppressed
the formation of Nb3+ species at the oxynitride surface
during nitridation. These differences led to water oxidation photocurrent
over the particulate LaNbON2 photoanode under AM 1.5 G
simulated sunlight, which has never previously been reported. Therefore,
the synthesis strategy using La-rich oxide was effective at preparing
less-defective LaNbON2, thus improving the photoactivity.