Achieving reinforcement learning in a three-active-terminal neuromorphic device based on a 2D vdW ferroelectric material

Guo, Feng; Io, Weng Fu; Dang, Zhaoying; Ding, Ran; Pang, Sin-Yi; Zhao, Yuqian; Hao, Jian

doi:10.1039/d3mh00714f

Cited by 7 publications

(2 citation statements)

References 40 publications

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“…It is worth noting that a plethora of low-dimensional vdWMs, including AgBiP 2 Se 6 [209], CuInP 2 S 6 [210], Bi 2 TeO 5 [211], α-In 2 Se 3 [212,213], β * -In 2 Se 3 [214], GeS [215], GeSe [216], GaSe [217], SnSe [218], SnS [41], Bi 2 O 2 Se [219], Sn 2 P 2 S 6 [220], Co 2 NF 2 [221], Bi 1.8 Sm 0.2 O 3 [222], etc, have thus far proven to host intrinsic ferroelectricity. Furthermore, in addition to coupling with the extrinsic ferroelectric layer, previous studies have consolidated that the ferroelectricity of the photosensitive materials themselves can also bring about anisotropic photoresponse [223][224][225][226].…”

Section: Ferroelectric Regulationmentioning

confidence: 99%

Low-dimensional van der Waals materials for linear-polarization-sensitive photodetection: materials, polarizing strategies and applications

Ma,

Yi,

Liang

et al. 2024

Mater. Futures

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Detecting light from a wealth of physical degrees of freedom (e.g., wavelength, intensity, polarization state, phase, etc.) enables the acquirement of more comprehensive information. In the past two decades, low-dimensional van der Waals materials (vdWMs) have established themselves as transformative building blocks toward lensless polarization optoelectronics, which is highly beneficial for optoelectronic system miniaturization. This review provides a comprehensive overview on the recent development of low-dimensional vdWM polarized photodetectors. To begin with, the exploitation of pristine 1D/2D vdWMs with immanent in-plane anisotropy and related heterostructures for filterless polarization-sensitive photodetectors is introduced. Then, we have systematically epitomized the various strategies to induce polarization photosensitivity and enhance the degree of anisotropy for low-dimensional vdWM photodetectors, including quantum tailoring, construction of core-shell structures, rolling engineering, ferroelectric regulation, strain engineering, etc., with emphasis on the fundamental physical principles. Following that, the ingenious optoelectronic applications based on the low-dimensional vdWM polarized photodetectors, including multiplexing optical communications and enhanced-contrast imaging, have been presented. In the end, the current challenges along with the future prospects of this burgeoning research field have been underscored. On the whole, the review depicts a fascinating landscape for the next-generation high-integration multifunctional optoelectronic systems.

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Section: Ferroelectric Regulationmentioning

confidence: 99%

Low-dimensional van der Waals materials for linear-polarization-sensitive photodetection: materials, polarizing strategies and applications

Ma,

Yi,

Liang

et al. 2024

Mater. Futures

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“…Combination of 2D direct bandgap materials and ferroelectric materials as heterostructures holds potential for neuromorphic visual sensors. [ 19,20 ] ReS 2 is adopted as channel layer for several reasons. 1) It manifests a direct bandgap over a broad range of thicknesses.…”

Section: Introductionmentioning

confidence: 99%

Ferroelectric Modulation of ReS₂‐Based Multifunctional Optoelectronic Neuromorphic Devices for Wavelength‐Selective Artificial Visual System

Dang,

Guo,

Zhao

et al. 2024

Adv Funct Materials

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Neuromorphic optoelectronic vision system inspired by the biological platform displays potential for in‐sensor computing. However, it is still challenge to process multiwavelength image in noisy environment with simple device configuration and light‐tunable biological plasticity. Here, a prototype visual sensor is demonstrated based on ferroelectric copolymer poly(vinylidene fluoride‐trifluoroethylene) (P(VDF‐TrFE)) and 2D rhenium disulfide (ReS2) with integration of recognition, memorization, and pre‐processing functions in the same device. Such synaptic devices achieve impressive electronic characteristics, including a current on/off ratio of 109 and mobility of 45 cm2 V−1 s−1. Various synaptic plasticity behaviors have been achieved owing to the switchable ferroelectricity, enabling them to establish an artificial neural network (ANN) with high digit recognition accuracy of 89%. Through constructing optoelectronic device array, object extraction is achieved with wavelength‐selective capability in noisy environment, closely resembling human retina for color recognition. Above outcomes bring a notable improvement in the image recognition rate from 72% to 96%. Besides, low energy consumption comparable to single biological event can be realized. With these multifunctional features, this work inspires highly integrated neuromorphic systems and the development of wavelength‐selective artificial visual platform.

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Self‐Powered Optoelectronic Synaptic Devices Based on In₂Se₃/MoS₂ Ferroelectric Heterojunction with Boosted Performance

Feng,

He,

Zeng

et al. 2023

Adv Materials Technologies

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Neuromorphic computing systems are based on new architecture inspired by biological learning behavior and biological structure to overcome the shortcomings of the von Neumann system, such as high energy consumption and generation of excessive redundant data. However, common synaptic‐device designs are still need to carry an external power source, which is detrimental to both the miniaturization of smart devices and the further reduction of energy consumption. Therefore, self‐powered optoelectronic synapses hold great promise for achieving energy‐efficient artificial intelligence applications. Given the advantages of heterogeneous integration and ferroelectric performance, the 2D ferroelectric In2Se3 has become a typical candidate material for biological synaptic devices and neuromorphic computing. Although, various structures of ferroelectric synaptic devices are developed, most of which are controlled by optical or electrical pulses, hardly any reports discuss the operation in self‐powered mode. In this work, an In2Se3/MoS2 ferroelectric lateral heterojunction‐type optoelectronic synaptic device is fabricated to mimic biological synaptic functions in voltage mode or self‐driven mode. In addition, two simplified image pre‐processing methods based on device arrays are shown to improve the recognition accuracy of a back‐end neural network. The proposed approach suggests a new route for designing and applying high‐performance synaptic devices.

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Achieving reinforcement learning in a three-active-terminal neuromorphic device based on a 2D vdW ferroelectric material

Abstract: Currently, for most three-terminal neuromorphic devices, only the gate terminal is active. The inadequate modes and freedom of modulation in such devices greatly hinder the implementation of complex neural behaviors...

Cited by 7 publications

References 40 publications

Low-dimensional van der Waals materials for linear-polarization-sensitive photodetection: materials, polarizing strategies and applications

Low-dimensional van der Waals materials for linear-polarization-sensitive photodetection: materials, polarizing strategies and applications

Ferroelectric Modulation of ReS₂‐Based Multifunctional Optoelectronic Neuromorphic Devices for Wavelength‐Selective Artificial Visual System

Self‐Powered Optoelectronic Synaptic Devices Based on In₂Se₃/MoS₂ Ferroelectric Heterojunction with Boosted Performance

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Achieving reinforcement learning in a three-active-terminal neuromorphic device based on a 2D vdW ferroelectric material

Abstract: Currently, for most three-terminal neuromorphic devices, only the gate terminal is active. The inadequate modes and freedom of modulation in such devices greatly hinder the implementation of complex neural behaviors...

Cited by 7 publications

References 40 publications

Low-dimensional van der Waals materials for linear-polarization-sensitive photodetection: materials, polarizing strategies and applications

Low-dimensional van der Waals materials for linear-polarization-sensitive photodetection: materials, polarizing strategies and applications

Ferroelectric Modulation of ReS2‐Based Multifunctional Optoelectronic Neuromorphic Devices for Wavelength‐Selective Artificial Visual System

Self‐Powered Optoelectronic Synaptic Devices Based on In2Se3/MoS2 Ferroelectric Heterojunction with Boosted Performance

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Product

Resources

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Ferroelectric Modulation of ReS₂‐Based Multifunctional Optoelectronic Neuromorphic Devices for Wavelength‐Selective Artificial Visual System

Self‐Powered Optoelectronic Synaptic Devices Based on In₂Se₃/MoS₂ Ferroelectric Heterojunction with Boosted Performance